sts PECVD high compressive stress nitride / oxide recipe

Yongliang Yang ylyang at stanford.edu
Thu Mar 17 17:45:44 PDT 2011


Hi,

Low frequency PECVD SiNx tends to be compressive. I deposited SiNx with different high and low frequency times and tested the tresses. Here is the results:

Standard recipe:
high frequency time= 5s
long frequency time=2s
---- Tested stress = ~ -70 MPa

My recipe:
high frequency time= 4s
long frequency time=3s
---- Tested stress = ~ -250 MPa

Best,
Yongliang

----- Original Message -----
From: "Nikhil Apte" <npapte at stanford.edu>
To: sts at snf.stanford.edu
Sent: Thursday, March 17, 2011 4:57:19 PM
Subject: sts PECVD high compressive stress nitride / oxide recipe

Hi, 


I am planning to deposit a high compressive stress nitride/oxide film on my wafers to correct the wafer curvature. Can anyone help me with what recipe / parameters I should use? 


Thanks, 
Nikhil 



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