FYI on ER from STS through Drytek4

Jeannie Perez nperez at stanford.edu
Thu Nov 29 13:53:04 PST 2012

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High Frequency Oxide test wafer from STS PECVD was etch in Drytek 4 with 
parameters:
  150 Watts,
  100 mT,
100 % CHF3,
10% O2
1min etch with results of 217A/min.

Jeannie

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