Comment stsetch SNF 2011-08-10 00:50:28: PR burned off on two wafers
mahnaz at stanford.edu
Wed Aug 10 07:58:24 PDT 2011
Why would you bake the resist for 4 hours?
Did you think that makes a harder?
You made the resist to crack and created many micro crack in it.
talk to Nancy or me if you want help.
On 8/10/2011 12:50 AM, dkozak at snf.stanford.edu wrote:
> Used 7 um spr 220-7 resist as mask. After 4 hours baking at 110C. Ran one wafer with deep_smooth for 2 hours, and another wafer with fastdeep for 2 hours. Used wafer holder on both wafers. Gas flow rates were consistent with previous runs.
> Both wafers had PR completely burned off after approx. 1.5 hours of etching.
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