From latta at snf.stanford.edu Thu Apr 1 10:18:52 2004 From: latta at snf.stanford.edu (Nancy Latta) Date: Thu, 01 Apr 2004 10:18:52 -0800 Subject: Etcher available until 2:00 today.... Message-ID: <406C5D0C.7030000@snf.stanford.edu> From ben.jian at arrayedfiberoptics.com Fri Apr 2 03:28:45 2004 From: ben.jian at arrayedfiberoptics.com (ben.jian) Date: Fri, 02 Apr 2004 03:28:45 Subject: Machine available now to 10:30 PM Message-ID: <20040402032845.16387.qmail@server266.com> Sorry for the late notice. Please ignore the Coral machine reservation status for this time slot - we are unable to access Coral at this time. Ben -------------- next part -------------- An HTML attachment was scrubbed... URL: From enwang at stanford.edu Mon Apr 5 18:44:10 2004 From: enwang at stanford.edu (Evelyn Ning-Yi Wang) Date: Mon, 5 Apr 2004 18:44:10 -0700 Subject: stsetch free 21:00-1:00 today Message-ID: <1081215850.40720b6aed255@webmail.stanford.edu> From latta at snf.stanford.edu Tue Apr 6 10:19:27 2004 From: latta at snf.stanford.edu (Nancy Latta) Date: Tue, 06 Apr 2004 10:19:27 -0700 Subject: Etcher free 10:00-1:00 today.... Message-ID: <4072E69F.3030204@snf.stanford.edu> From adaven at stanford.edu Thu Apr 8 03:55:32 2004 From: adaven at stanford.edu (Andrew Arthur Davenport) Date: Thu, 8 Apr 2004 03:55:32 -0700 Subject: etching through wafer Message-ID: <1081421732.40752fa4b8e6c@webmail.stanford.edu> stsetch users, I'm trying to etch a 8um hole through a 325um wafer. I've tried the standard recipies (deep and fastdeep), and also 7um and 10um resist. None of these seem to be able to etch through within 4 hours (by that time the resist is burnt). Have tried bonding to another wafer with photoresist - it improves the resist lifetime but will still burn eventually. Just wondering if anyone had experience with small deep features (or aspect ratios >30). I'm currently trying one of the recipies in the Ayon paper listed on the SNF website, but am uncertain of whether it will work. Thanks, Andrew Davenport From kenney at slac.stanford.edu Thu Apr 8 10:12:13 2004 From: kenney at slac.stanford.edu (Chris Kenney) Date: Thu, 8 Apr 2004 10:12:13 -0700 (PDT) Subject: etching through wafer In-Reply-To: <1081421732.40752fa4b8e6c@webmail.stanford.edu> References: <1081421732.40752fa4b8e6c@webmail.stanford.edu> Message-ID: Hi Andrew, Our group has been etching small, high-aspect-ratio features since the machine was installed. When you say a 8 micrn hole, do you mean a circular cross section or a trench? For circular features we obtain aspect ratios of 15 to 1 after some tuning and some luck. During the etch the diameter tends to widen. Several years ago we etched small holes through a 300 micron thick wafer. The holes were drawn as 15 micron diameter circles on the mask. As I recall it took 4-5 hours to etch through and the holes ended up around 22-23 microns in diameter after the etch. Most papers use trenches when discussing process development for a DRIE machine. Trenches are easier to measure and one can obtain higher aspect ratios with trenches. Unless a paper is very explicit in specifying that circular holes were used I'd assume they used trenches. Goodluck. Chris On Thu, 8 Apr 2004, Andrew Arthur Davenport wrote: > > > stsetch users, > I'm trying to etch a 8um hole through a 325um wafer. I've tried the > standard recipies (deep and fastdeep), and also 7um and 10um resist. None > of these seem to be able to etch through within 4 hours (by that time the > resist is burnt). Have tried bonding to another wafer with photoresist - it > improves the resist lifetime but will still burn eventually. Just wondering > if anyone had experience with small deep features (or aspect ratios >30). > I'm currently trying one of the recipies in the Ayon paper listed on the SNF > website, but am uncertain of whether it will work. > > Thanks, > Andrew Davenport > From han-jun.kim at hp.com Thu Apr 8 11:08:52 2004 From: han-jun.kim at hp.com (Kim, Han-jun) Date: Thu, 8 Apr 2004 11:08:52 -0700 Subject: etching through wafer Message-ID: <40700B4C02ABD5119F0000902787664406C018CA@hplex1.hpl.hp.com> Hi, I'd agree with Chris that holes are more difficult than trenches. I personally didn't have any problem in etching 40:1 AR features (0.5 um wide & 20 um deep), with CD loss around 5%, using the current "old" STS. But they were "trenches" with 500 um of length, not "holes". When you etch "deep" holes, you may want to take microloading and sidewall profile into account. I think you will better achieve your process goal by modifying the recipes of your current use. Let me tell you a guideline about it briefly: Horizontal etching may be minimized by increasing C4F8 flow rate and decreasing power. When you add some oxygen, the surface is also passivated with Si(x)O(y)F(z) along with the CF(X) on it. But the passivation is compromised with the enhanced etch rate. If you're concerned that adding oxygen etches resist way faster, you may introduce a hard mask. Finally, lowering pressure helps regulate the gas density that the resulting etch becomes more uniform. This feature helps especially when the exposed areas are small. But, this is at the cost of reduced etch rate. Good luck on your process! regards, Hanjun ============================= Han-Jun Kim Hewlett-Packard Lab. 1501 Page Mill Rd, MS 1198 Palo Alto, CA 94304 (650) 857-8525 / 8948 FAX hjkim at hpl.hp.com ============================= -----Original Message----- From: Chris Kenney [mailto:kenney at slac.stanford.edu] Sent: Thursday, April 08, 2004 10:12 AM To: Andrew Arthur Davenport Cc: stsetch at snf.stanford.edu Subject: Re: etching through wafer Hi Andrew, Our group has been etching small, high-aspect-ratio features since the machine was installed. When you say a 8 micrn hole, do you mean a circular cross section or a trench? For circular features we obtain aspect ratios of 15 to 1 after some tuning and some luck. During the etch the diameter tends to widen. Several years ago we etched small holes through a 300 micron thick wafer. The holes were drawn as 15 micron diameter circles on the mask. As I recall it took 4-5 hours to etch through and the holes ended up around 22-23 microns in diameter after the etch. Most papers use trenches when discussing process development for a DRIE machine. Trenches are easier to measure and one can obtain higher aspect ratios with trenches. Unless a paper is very explicit in specifying that circular holes were used I'd assume they used trenches. Goodluck. Chris On Thu, 8 Apr 2004, Andrew Arthur Davenport wrote: > > > stsetch users, > I'm trying to etch a 8um hole through a 325um wafer. I've tried the > standard recipies (deep and fastdeep), and also 7um and 10um resist. None > of these seem to be able to etch through within 4 hours (by that time the > resist is burnt). Have tried bonding to another wafer with photoresist - it > improves the resist lifetime but will still burn eventually. Just wondering > if anyone had experience with small deep features (or aspect ratios >30). > I'm currently trying one of the recipies in the Ayon paper listed on the SNF > website, but am uncertain of whether it will work. > > Thanks, > Andrew Davenport > From alan.m.myers at intel.com Thu Apr 8 13:42:16 2004 From: alan.m.myers at intel.com (Myers, Alan M) Date: Thu, 8 Apr 2004 13:42:16 -0700 Subject: STS free 17:00 - 21:00 tonight Message-ID: <8A3152FDE2948B42AECCF93BFFA130EC011CD99B@scsmsx401.sc.intel.com> Wafers not ready. Sorry for the late notice From izuleta at stanford.edu Sun Apr 11 10:28:19 2004 From: izuleta at stanford.edu (Ignacio A. Zuleta) Date: Sun, 11 Apr 2004 10:28:19 -0700 Subject: STS etch down Message-ID: <200404111728.i3BHSBbS013134@smtp2.Stanford.EDU> Dear Fellow Labmembers, Unfortunately, one of my wafers broke in the STS etcher today. I am deeply sorry for this inconvenience. Sincerely, Ignacio A. Zuleta -------------- next part -------------- An HTML attachment was scrubbed... URL: From enwang at stanford.edu Tue Apr 13 20:15:52 2004 From: enwang at stanford.edu (Evelyn Wang) Date: Tue, 13 Apr 2004 20:15:52 -0700 Subject: stsetch free 21:00-0:00 today Message-ID: <5.2.1.1.2.20040413201520.01b095a8@localhost> From adaven at stanford.edu Fri Apr 16 11:55:50 2004 From: adaven at stanford.edu (Andrew Arthur Davenport) Date: Fri, 16 Apr 2004 11:55:50 -0700 Subject: etcher open 5-9pm Message-ID: <1082141750.40802c3626179@webmail.stanford.edu> Process interrrupted. Very sorry for the last notice From ben.jian at arrayedfiberoptics.com Wed Apr 21 00:18:47 2004 From: ben.jian at arrayedfiberoptics.com (ben.jian) Date: Wed, 21 Apr 2004 00:18:47 Subject: machine available now to 9PM Message-ID: <20040421001847.10655.qmail@server266.com> Sorry for the late notice. -------------- next part -------------- An HTML attachment was scrubbed... URL: From fumin at stanford.edu Fri Apr 23 14:41:57 2004 From: fumin at stanford.edu (Fu-Min Wang) Date: Fri, 23 Apr 2004 14:41:57 -0700 Subject: sts etch available tonight from 21:00 Message-ID: <000c01c4297b$cda9ccb0$1aa540ab@mozart> Dear all, I won't be able to use my STS etch time from 21:00 tonight. You are free to take it and sorry for the late notice. Fumin ***************************************************************** Fu-Min Wang Ph.D. Student Stanford University Department of Mechanical Engineering Microscale Heat Transfer Laboratory http://www.stanford.edu/group/microheat/people.html Tel: (650) 723-2632 Fax: (650) 723-7657 ***************************************************************** -------------- next part -------------- An HTML attachment was scrubbed... URL: From pcastle at stanford.edu Sun Apr 25 08:32:03 2004 From: pcastle at stanford.edu (Joseph P. Castle) Date: Sun, 25 Apr 2004 08:32:03 -0700 Subject: canceled reservation 1pm to 3pm Message-ID: <1082907123.408bd9f33ff53@webmail.stanford.edu> From wtpark at stanford.edu Mon Apr 26 10:40:23 2004 From: wtpark at stanford.edu (Woo-Tae Park) Date: Mon, 26 Apr 2004 10:40:23 -0700 Subject: done early Message-ID: <1083001223.408d4987c32b0@webmail.stanford.edu> Done early, releasing time until 12:30PM. ME342A team From cbaxter at snf.stanford.edu Thu Apr 29 23:08:33 2004 From: cbaxter at snf.stanford.edu (Cesar Baxter) Date: Thu, 29 Apr 2004 23:08:33 -0700 Subject: STSetch Message-ID: <4091ED61.1546E847@snf.stanford.edu> To All Users, The rf tripped fault is due to a bad air cap inside the rf match, it was arcing on the shaft bushing. A new air cap will need to be order. The system will remain on shutdowm till a new air cap is installed. Cesar From izuleta at stanford.edu Fri Apr 30 01:02:25 2004 From: izuleta at stanford.edu (Ignacio A. Zuleta) Date: Fri, 30 Apr 2004 01:02:25 -0700 Subject: Want to trade time? Message-ID: <200404300802.i3U82PPf006022@smtp2.Stanford.EDU> Hello fellow Etchers! Would you like to trade time with me? I have a reservation on Sat for 2 hours, I would like to trade it for some afternoon time on Monday so I can take Sat off. Please let me know if interested so I do not prepare my wafers for Sat. Thanks!! Ignacio ----------------------------------- Chemistry Department Stanford University 333 Campus Drive Stanford, CA 94305 (650)723-4332 (office) (650)725-0259 (fax) ----------------------------------- -------------- next part -------------- An HTML attachment was scrubbed... URL: