rookie questions

Benjamin Chui bchui at california.com
Thu May 6 01:32:36 PDT 2004


Ignacio,

Also make sure the aluminum the way you're using it on the
wafer is allowed in the STS (it sounds like it's not
exposed, so it should be ok).

Ben


On Thu, 6 May 2004 00:53:13 -0700 (PDT)
 "Michael S. Bartsch" <mbartsch at stanford.edu> wrote:
> Hello Ignacio,
> 
> I can't speak to the use of the P5000, but my
> understanding is that the
> STS requires a photoresist mask in order to achieve its
> high aspect ratio
> etches.  Basically your PR mask is what provides the
> etcher with the
> polymer components it needs to passivate the etched
> side-walls as the
> machine cycles through etch and passivation steps.  With
> an oxide mask
> only and no source of polymer, I don't believe you can
> get the nice,
> vertical side-walls you probably want from the etch.
> 
> Good luck,
> Mike
> 
> 
> > 
> > Dear STS users,
> > 
> > I am in the process of optimizing a process flow that
> involves the use of 
> > the STS machine here in the lab. I am considering using
> oxide as a mask, 
> > and I wanted to check that I am thinking about the
> process right. I am 
> > planning to use tylanbpsg to put oxide on a Al-coated
> double-polished 
> > wafer(just one side), then I planned to pattern the
> oxide (and the Al 
> > layer) with the same mask using the P5000, finally
> STSetching trenches and 
> > release windows on the front and back of my wafer,
> respectively. The 
> > questions I have are:
> > 
> > * Is the P5000 plasma etcher the right tool to pattern
> the oxide?
> > 
> > * Are oxide masks better in any sense than PR masks in
> an STS etch?
> > 
> > Thanks,
> > 
> > Ignacio
> > -- 
> > Ignacio A. Zuleta
> > Chemistry Department
> > Stanford University
> > Office: (650)723-4332
> > Cellphone: (650)799-9225
> > Fax: (650)725-0259
> > 
> 




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