From eenriquez at snf.stanford.edu Thu Jul 16 14:50:03 2009 From: eenriquez at snf.stanford.edu (eenriquez at snf.stanford.edu) Date: Thu, 16 Jul 2009 14:50:03 -0700 Subject: Comment stsetch2 SNF 2009-07-16 14:50:02: Update PM Message-ID: Chamber has been reassembled (except for top cover). Leak rate is about 13 mT/min (needs to be < 1). Baking out the system overnight and will continue to leak check tomorrow. From eenriquez at snf.stanford.edu Fri Jul 17 15:31:56 2009 From: eenriquez at snf.stanford.edu (eenriquez at snf.stanford.edu) Date: Fri, 17 Jul 2009 15:31:56 -0700 Subject: Comment stsetch2 SNF 2009-07-17 15:31:56: Update PM Message-ID: Replaced a leaky view port o-ring. Leak rate was about 10 mT/min. Ran O2 plasma for 3 hours. User is running the tool to check his process. From mmessana at snf.stanford.edu Fri Jul 17 16:32:37 2009 From: mmessana at snf.stanford.edu (mmessana at snf.stanford.edu) Date: Fri, 17 Jul 2009 16:32:37 -0700 Subject: Comment stsetch2 SNF 2009-07-17 16:32:36: Results Message-ID: Ran isotropic etch recipe to thin wafer. It seemed faster than before by about 20%. No info on etch profile. No info on uniformity becuase the wafer didn't start out uniform. From eenriquez at snf.stanford.edu Wed Jul 22 18:54:20 2009 From: eenriquez at snf.stanford.edu (eenriquez at snf.stanford.edu) Date: Wed, 22 Jul 2009 18:54:20 -0700 Subject: Comment stsetch2 SNF 2009-07-22 18:54:20: Update PM Message-ID: Replaced 3 plastic bulkhead clamps with aluminum ones. The plastic KF clamps were burnt and deformed by the chamber heat. Leak rate however was still about 10 mT/min. Found leaks in the coil area and the bottom electrode. Unable to pin point either leaks because of obstructions. I will disassemble the coil assembly again to check the sealing surfaces (all o-ring in the coil assembly have been replaced). As far as the bottom electrode leak, we will need to discuss bringing in field service to rebuild the electrode assembly. Note: The leak rate was about 10 mT/ min before the PM started. From mcvittie at snf.stanford.edu Tue Jul 28 17:51:01 2009 From: mcvittie at snf.stanford.edu (Jim McVittie) Date: Tue, 28 Jul 2009 17:51:01 -0700 Subject: STS2 Status Update Message-ID: <4A6F9CF5.1050207@snf.stanford.edu> STS2 Users, The top section of the etcher has been thoroughly cleaned and the ICP coil ceramic and all the o-rings in this section have been replaced. In addition, a manufacturing defect in the positioning of the ICP coil, which was causing sputtering, has been corrected. These changes should improve the etch performance and control. An initial test done yesterday shows a about a 15 increase in etch rate use an SOI process. Unfortunately, the air leak rate into the chamber is still around 10 mT/min, which is the same as before the shutdown. Elmer and Mike have determined that the o-ring between the middle and bottom sections of the etch chamber is leaking. Replacing this o-ring is very complicated. A procedure for replacing this o-ring has been requested but has not been forth coming from STS. STS has offered to replace this o-ring and those in the bottom section of the chamber for $12,000 but they can not do it until late August. We have been requested to take the tool off shutdown while we wait for the leak repair. While the present leak rate may have subtle effects on the etch performance, it is unlikely to have major effects on the processes. In particular, it is unlikely that this leak rate contributed to the resist burning problem seen before the shutdown. It was more likely to have been caused by the helium lip seal, which has been replaced. Although we are not going to work on improving the etch processes until the leak is repaired, the initial SOI process test results for a 20 um deep etch for widths between 1 and 50 ums showed typical results similar to what was seen before the shut down but with the higher etch rate. For now we are taking the system off shutdown but are not making any guarantees about the tool's performance. Once the leak has been repaired, we will be doing of series of qualification tests ( etch rates, dep rates, wafer temperature) to compare the tool^Rs performance to when the system was new. If problems are found, they will be addressed. We are planning on installing an enhanced radical transfer funnel STS. The roll of this Teflon funnel is to reduce the loss of active radicals from the ICP plasma zone to the wafer. The goal of the tunnel in to increase etch rate without increasing ion bombardment which contributes to resist heating and loss. Jim From eenriquez at snf.stanford.edu Fri Jul 31 15:06:16 2009 From: eenriquez at snf.stanford.edu (eenriquez at snf.stanford.edu) Date: Fri, 31 Jul 2009 15:06:16 -0700 Subject: Shutdown stsetch2 SNF 2009-06-24 08:57:31: Performing PM Message-ID: Completed the upper chamber PM. Chamber leak rate is about as it was before the PM (10 mT/min). Backside He leak rate is a little high at 18 sccm (normally its around 10 sccm) even after replacing the lip seal oring. System should be OK to run for non-critical processes. Please read Jim Mcvittie's emails for a more detailed account of the PM. From eenriquez at snf.stanford.edu Fri Jul 31 15:06:35 2009 From: eenriquez at snf.stanford.edu (eenriquez at snf.stanford.edu) Date: Fri, 31 Jul 2009 15:06:35 -0700 Subject: Comment stsetch2 SNF 2009-05-15 13:16:29: Needs PM Message-ID: Archived From eenriquez at snf.stanford.edu Fri Jul 31 15:06:42 2009 From: eenriquez at snf.stanford.edu (eenriquez at snf.stanford.edu) Date: Fri, 31 Jul 2009 15:06:42 -0700 Subject: Comment stsetch2 SNF 2009-07-16 14:50:02: Update PM Message-ID: Archived From eenriquez at snf.stanford.edu Fri Jul 31 15:06:53 2009 From: eenriquez at snf.stanford.edu (eenriquez at snf.stanford.edu) Date: Fri, 31 Jul 2009 15:06:53 -0700 Subject: Comment stsetch2 SNF 2009-07-17 15:31:56: Update PM Message-ID: Archived From eenriquez at snf.stanford.edu Fri Jul 31 15:07:00 2009 From: eenriquez at snf.stanford.edu (eenriquez at snf.stanford.edu) Date: Fri, 31 Jul 2009 15:07:00 -0700 Subject: Comment stsetch2 SNF 2009-07-22 18:54:20: Update PM Message-ID: Archived From eenriquez at snf.stanford.edu Fri Jul 31 15:13:18 2009 From: eenriquez at snf.stanford.edu (eenriquez at snf.stanford.edu) Date: Fri, 31 Jul 2009 15:13:18 -0700 Subject: Problem stsetch2 SNF 2009-07-31 15:13:17: High leak rate Message-ID: Chamber leak rate ~ 10 mT/min - Need to replace the magnetic confinement o-ring and rebuild the lower electrode. Field service will be available on Aug 17th. Backside He cooling flow rate is also a little high at 18 sccm. The flow is normally around 10 sccm and the shutdown limit is 25 sccm.