From bclee79 at stanford.edu  Wed Nov  7 15:36:58 2012
From: bclee79 at stanford.edu (Miss Tina)
Date: Wed, 7 Nov 2012 15:36:58 -0800 (PST)
Subject: Tube pressure
In-Reply-To: <1523037019.6468516.1352331264615.JavaMail.root@stanford.edu>
Message-ID: <297140465.6470590.1352331418416.JavaMail.root@stanford.edu>

Dear SNF members, 

I just want to know the pressure inside the oxidation tube during the normal oxidation.
My oxidation temperature is 1050C in dry ambience.  
Can I just apply a simple ideal gas law as a function of the temperature? 
If someone has information or some related papers, it would be very helpful. 

Thanks, 
BC
-------------------------------------------------------------------------------------------------- 
?Byung Chul(BC) Lee ? 
? 
? Graduate Student (Ph.D course) 
???? Khuri-Yakub Ultrasonics Lab. 
???? Center for Nanoscale science and Engineering, Room 225, 
? ?? Stanford University 
?? ? Stanford, CA 94305, USA 
??? ?E-mail : bclee79 at stanford.edu 

??Research Scientist 
???? Center for Bio-Microsystem, 
???? Brain Science Institute, 
?? ? Korea Institute of Science and Technology (KIST), 
???? Seoul 136-791,?South Korea 
?? ? E-mail : bclee at kist.re.kr 

-------------------------------------------------------------------------------------------------- 



From shott at stanford.edu  Wed Nov  7 17:38:50 2012
From: shott at stanford.edu (John Shott)
Date: Wed, 7 Nov 2012 17:38:50 -0800
Subject: Tube pressure
In-Reply-To: <297140465.6470590.1352331418416.JavaMail.root@stanford.edu>
References: <297140465.6470590.1352331418416.JavaMail.root@stanford.edu>
Message-ID: <AA2227AB-8288-410E-96BF-1CF71A6957A4@stanford.edu>

BC

The tube is at atmospheric pressure for a dry oxidation. For a steam oxidation, our tubes will still be at atmospheric pressure but the partial pressure of steam is slightly less than 1..

John

Sent from my iPhone

On Nov 7, 2012, at 3:36 PM, Miss Tina <bclee79 at stanford.edu> wrote:

> Dear SNF members, 
> 
> I just want to know the pressure inside the oxidation tube during the normal oxidation.
> My oxidation temperature is 1050C in dry ambience.  
> Can I just apply a simple ideal gas law as a function of the temperature? 
> If someone has information or some related papers, it would be very helpful. 
> 
> Thanks, 
> BC
> -------------------------------------------------------------------------------------------------- 
>  Byung Chul(BC) Lee   
>   
>   Graduate Student (Ph.D course) 
>      Khuri-Yakub Ultrasonics Lab. 
>      Center for Nanoscale science and Engineering, Room 225, 
>      Stanford University 
>      Stanford, CA 94305, USA 
>      E-mail : bclee79 at stanford.edu 
> 
>   Research Scientist 
>      Center for Bio-Microsystem, 
>      Brain Science Institute, 
>      Korea Institute of Science and Technology (KIST), 
>      Seoul 136-791, South Korea 
>      E-mail : bclee at kist.re.kr 
> 
> -------------------------------------------------------------------------------------------------- 
> 


From josep at stanford.edu  Fri Nov 16 09:10:12 2012
From: josep at stanford.edu (Jose Padovani)
Date: Fri, 16 Nov 2012 09:10:12 -0800
Subject: released 11am-4pm today
Message-ID: <3A8273B2-7A96-4330-86A0-C8AC01DDD04A@stanford.edu>

Wafers not ready.

--
Jose Padovani
Graduate Student
Electrical Engineering Department
Stanford University
(650) 796-1971







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