From maurice at snf.stanford.edu Thu Nov 6 16:57:36 2008 From: maurice at snf.stanford.edu (maurice at snf.stanford.edu) Date: Thu, 6 Nov 2008 16:57:36 -0800 Subject: Comment thermco2 SNF 2008-11-06 16:57:36: 11/6 Message-ID: Modified the standard 1umSiH4 recipe(800c at Atm) to unload the wafer from the chamber after it is cool to 400c. Ran a test and wafer came out with the same black deposition. Tryed to run the DCS1050_15torr recipe. It aborted in the pressure rampdown step. The ramp down now has a 15 sec delay before the pressure starts to drop(it does it in the leakcheck also...but there is no gas flowing during the leakcheck). This delay is with gas flowing is causing the overpressure. I ran a leak check after the overpressure: Base =0.98 Leakrate =237 From maurice at snf.stanford.edu Thu Nov 6 17:13:16 2008 From: maurice at snf.stanford.edu (maurice at snf.stanford.edu) Date: Thu, 6 Nov 2008 17:13:16 -0800 Subject: Comment thermco2 SNF 2008-11-06 16:57:36: 11/6 Message-ID: This was for epi...not thermco 2