Thin oxide measurement
ahazeghi at stanford.edu
Thu Feb 28 20:07:35 PST 2008
I have used DRY900 recipe @ 39min to grow ~150A oxide on <100> substrate, I
used nanospec (both of them) to measure thickness using my control wafer
(which didn't go through oxidation) for calibration. On nanospec if I use
the thin oxide on silicon option, I get ~132-143A across the wafer and if I
use regular oxide on silicon I get 170~180A. Which one is more accurate/how
can I measure oxide thickness more accurately?
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