hjkim at exch.hpl.hp.com
Tue Jun 3 17:00:40 PDT 2003
Deposition rate of LTO is way too fast, in general, to make such
thin film deposition controllable.
In my experience (not at SNF), HTO deposited at 800~900 C using
DCS and N2O (instead of silane and oxygen which are for LTO)
provided high-quality film (as uniform and dense as thermal oxide)
at a very controllable rate (down to ~ 4 A/min). I didn't try it at SNF
yet, but maybe Gladys or Maurice might give an answer if this process
is available here.
Han-Jun Kim Hewlett-Packard Lab.
(650) 857-8525 1501 Page Mill Rd.
(650) 857-8948 FAX MS 1198
hjkim at hpl.hp.com Palo Alto, CA 94304
From: Alan Hsiung [mailto:hsiung at snf.stanford.edu]
Sent: Tuesday, June 03, 2003 4:30 PM
To: tylanbpsg at snf.stanford.edu
Subject: Thin LTO
I am just wondering if anybody has the experience to deposit as thin as 200A LTO.
If so, how kind of condition have you ever tried? How is the result? Uniformity and etc.
I have been struggling to deposit such a thin LTO using LTO450P recipe, but no much luck.
Any advice will be greatly appreciated.
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