From mlacolle at stanford.edu  Wed Jun  9 04:53:18 2004
From: mlacolle at stanford.edu (Matthieu Lacolle)
Date: Wed,  9 Jun 2004 04:53:18 -0700
Subject: etch rate of oxide by HF
Message-ID: <1086781998.40c6fa2e39ad3@webmail.stanford.edu>

Hi,

Does anyone have data about the etch rate of Si-oxide as a function of HF
concentration? I am looking especially in the 10% HF - 30% HF range (not a
buffered solution).

Thanks all,

Matthieu


From shott at snf.stanford.edu  Wed Jun  9 09:20:59 2004
From: shott at snf.stanford.edu (John Shott)
Date: Wed, 9 Jun 2004 09:20:59 -0700
Subject: etch rate of oxide by HF
References: <1086781998.40c6fa2e39ad3@webmail.stanford.edu>
Message-ID: <03c101c44e3d$c07b63a0$286540ab@jds>

Matthieu:

According to a plot that I find on page 265 of Runyan and Bean
(Semiconductor Integrated Circuit Processing Technology), I read off the
following points based on the volume percentage of 49% HF in water:

Volume Percentage    Etch Rate (A/sec)
2                                    1.3
5                                    3
10                                  6
16                                10
20                                15
30                                25

Note: These are etch rates for undoped thermal SiO2.  Undensified deposited
oxide, heavily phosphorus doped oxide, etc. will etch significantly faster.

Also note that these numbers we taken from my interpolations of a log-log
plot and, as a result, may not be precise.

Thanks,

John


----- Original Message ----- 
From: "Matthieu Lacolle" <mlacolle at stanford.edu>
To: <wbgeneral at snf.stanford.edu>
Sent: Wednesday, June 09, 2004 4:53 AM
Subject: etch rate of oxide by HF


> Hi,
>
> Does anyone have data about the etch rate of Si-oxide as a function of HF
> concentration? I am looking especially in the 10% HF - 30% HF range (not a
> buffered solution).
>
> Thanks all,
>
> Matthieu
>