From ankurjn at stanford.edu  Wed Dec  7 17:25:45 2005
From: ankurjn at stanford.edu (Ankur Jain)
Date: Wed,  7 Dec 2005 17:25:45 -0800
Subject: Etch rate of STS PECVD Oxide in 6:1 BOE
Message-ID: <1134005145.43978b993ec11@webmail.stanford.edu>

Hello everyone,
 I am trying to etch a 3000 A thick PECVD oxide layer deposited by the STS
PECVD machine at SNF using 6:1 BOE. Can someone who has done something
similar before give me an idea of the expected etch rate they have observed
using 6:1 BOE, or another HF based etchant?


thanks,

Ankur