From ehkim at stanford.edu  Thu Sep 20 17:08:01 2001
From: ehkim at stanford.edu (Eun-Ha Kim)
Date: Thu, 20 Sep 2001 17:08:01 -0700
Subject: Etch oxide on germanium film
References: <3B58B419.511610AD@snf.stanford.edu>
Message-ID: <003f01c14231$7a9e7400$316340ab@EUN>

Hi all,
I am hoping to strip off LTO, which is on top of the 1000A-thick germanium
film on silicon wafer. I am just wondering if germanium will be okay in HF
while removing LTO. Any information on this will be appreciated.
 ______________________________

Yours truly,
Eun-Ha Kim

CISX Building,  Rm 300
Stanford University
Stanford, CA 94305
Phone : (650) 725-0419
Email  : ehkim at stanford.edu



From emes at lbl.gov  Mon Sep 24 08:07:21 2001
From: emes at lbl.gov (emes at lbl.gov)
Date: Mon, 24 Sep 2001 7:07:21 PST
Subject: Etch oxide on germanium film
Message-ID: <100134404201@mail1.emumail.net>

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