From ahazeghi at stanford.edu  Mon Nov  7 16:08:28 2005
From: ahazeghi at stanford.edu (Arash Hazeghi)
Date: Tue,  8 Nov 2005 03:38:28 +0330
Subject: LTO wet etch rate
Message-ID: <1131408508.436fec7cceb80@webmail>


Hi,
I have some W wafers with ~2600A LTO 400 with normal 1um resist, I want to
etch LTO for ~2um using 6:1 or 20:1 Buff HF, does anyone know the etch rate
and PR/Oxide Oxide/W selectivity for Wbmetal?

Thanks,
Arash