From wslee at stanford.edu  Thu Mar 15 17:05:34 2012
From: wslee at stanford.edu (Scott Lee)
Date: Thu, 15 Mar 2012 17:05:34 -0700
Subject: polysilicon recipe
Message-ID: <CAC8qUHAEdjLKwumbQoyXHC2w+gZ13vDbctMmEFA5nySRq+tKYg@mail.gmail.com>

Hi all,

I'm trying to measure the thickness of unannealed polysilicon (in-situ
doped n-type, deposited at 580C) ontop of LTO (about 18000A). I measured
the oxide thickness on woollam before the poly deposition and got a good
fit.

What is the best material recipe to use for poly? Does anyone have
experience with this?

Thanks,
Scott
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From edmyers at stanford.edu  Fri Mar 16 07:36:48 2012
From: edmyers at stanford.edu (Ed Myers)
Date: Fri, 16 Mar 2012 07:36:48 -0700
Subject: polysilicon recipe
In-Reply-To: <CAC8qUHAEdjLKwumbQoyXHC2w+gZ13vDbctMmEFA5nySRq+tKYg@mail.gmail.com>
References: <CAC8qUHAEdjLKwumbQoyXHC2w+gZ13vDbctMmEFA5nySRq+tKYg@mail.gmail.com>
Message-ID: <4F635000.8010100@stanford.edu>

Scott,

Poly is a challenge.  It is very dependent on the deposition 
temperature, so there is no correct recipe.  The best approach is to use 
a 3 component EMA film.  At 580C it will be a combination of crystalline 
silicon, amorphous silicon and voids.  I would suggest a 75-20-5 as the 
starting percentages.  As you go higher in temperature the percentage of 
crystalline silicon increases.  As you go lower, the percentage of 
amorphous silicon dominates.

Ed

On 3/15/2012 5:05 PM, Scott Lee wrote:
> Hi all,
>
> I'm trying to measure the thickness of unannealed polysilicon (in-situ 
> doped n-type, deposited at 580C) ontop of LTO (about 18000A). I 
> measured the oxide thickness on woollam before the poly deposition and 
> got a good fit.
>
> What is the best material recipe to use for poly? Does anyone have 
> experience with this?
>
> Thanks,
> Scott


From ludwig.galambos at gmail.com  Fri Mar 16 08:59:52 2012
From: ludwig.galambos at gmail.com (Ludwig G.)
Date: Fri, 16 Mar 2012 08:59:52 -0700
Subject: polysilicon recipe
In-Reply-To: <4F635000.8010100@stanford.edu>
References: <CAC8qUHAEdjLKwumbQoyXHC2w+gZ13vDbctMmEFA5nySRq+tKYg@mail.gmail.com>
	<4F635000.8010100@stanford.edu>
Message-ID: <CAC4rqR-LEZj3bFV1Ho5-grDen+z=VBOvXH8FXBF49pNsuanDFQ@mail.gmail.com>

Hi Scott,

If you have time, talk to Ted Kamins, he is THE expert to talk to

In case that you do know him, I can introduce you, we work together in
another project

Let me know

Ludwig






On Fri, Mar 16, 2012 at 7:36 AM, Ed Myers <edmyers at stanford.edu> wrote:

> Scott,
>
> Poly is a challenge.  It is very dependent on the deposition temperature,
> so there is no correct recipe.  The best approach is to use a 3 component
> EMA film.  At 580C it will be a combination of crystalline silicon,
> amorphous silicon and voids.  I would suggest a 75-20-5 as the starting
> percentages.  As you go higher in temperature the percentage of crystalline
> silicon increases.  As you go lower, the percentage of amorphous silicon
> dominates.
>
> Ed
>
> On 3/15/2012 5:05 PM, Scott Lee wrote:
>
>> Hi all,
>>
>> I'm trying to measure the thickness of unannealed polysilicon (in-situ
>> doped n-type, deposited at 580C) ontop of LTO (about 18000A). I measured
>> the oxide thickness on woollam before the poly deposition and got a good
>> fit.
>>
>> What is the best material recipe to use for poly? Does anyone have
>> experience with this?
>>
>> Thanks,
>> Scott
>>
>
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