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Furnace summary

This chart is an over view of the capabilities of all the furnaces at SNF.

 

Process Coral Name Substrates Accepted Gases Cleaning required Substrate Shape accepted Number of Samples Per Run Temp Range Film Thickness Range Comments
Grown Oxide- Atmospheric Furnaces Tylan1 Tylan2 Clean group N2, O2, Ar, H2 Pre-diff 3” & 4” 50 700- 1100C 25A-2um Dry and wet oxidation. Use calculator to determine growth rate. N2 and Ar annealing available.

Thermco 1     Thermco 2
Thermco3
Thermco4
Clean group N2, O2, Ar, H2 Pre-diff 4” & 6” 50 700- 1100C 25A-2um Dry and wet oxidation. Use calculator to determine growth rate. N2 and Ar annealing available.

Tylan3 Semi-clean group N2, O2, Ar, H2 Pre-diff at wbsilicide only 3” & 4” 50 700- 1100C 25A-2um Dry and wet oxidation. Use calculator to determine growth rate. N2 and Ar annealing available.

Tylan4 Contaminated group N2, O2, Ar, H2 Pre-diff or PRS1000 or PRX127 clean at wbgen only 3” & 4” 50 700- 1100C 25A-2um Dry and wet oxidation. Use calculator to determine growth rate. N2 and Ar annealing available.
Grown Oxide- Rapid Thermal Annealers aw610-l Clean and semi-clean groups N2,Ar,NH3,O2,
4% Forming gas

3" to 6"
room -1150c



aw610-r Contaminated group N2,Ar,NH3,O2,
4% Forming gas

3" to 6"

room -1150c

Plasma Oxidation tel Clean group N2, O2, H2, Ar Pre-diff 4” to 12” 1 -400C 35-150A
Deposited Oxide tylanbpsg Clean and semi-clean groups N2, O2, SiH4, PH3 Pre-diff or PRS1000 or PRX127 clean at wbmetal 4” 26 clean, 26 semi-clean 350-450C 100A-3um

teos2 Clean group N2, O2, TEOS Pre-diff 4” & 6” 45 450-680C 50A-5um Very conformal.

sts Contaminated group N2, O2, NH3, 2%SiH4 in N2 Pre-diff or PRS1000 or PRX127 clean at wbgen only 4” & 6” and pieces Four 4” or one 6” 350C 100A-4.5um PECVD.
Deposited Nitride tylannitride Clean group N2, NH3, DCS Pre-diff 4” 44 785-850C 100A-2um Stociometric, low stress (~150mPa) and super low stress (~50mPa) programs available

thermconitride1 Clean group N2, NH3, DCS Pre-diff 4” & 6” 44 785-850C 100A-2um Stociometric and low stress (~150mPa) programs available

sts Contaminated group N2, O2, NH3, 2%SiH4 in N2 Pre-diff or PRS1000 or PRX127 clean at wbgen only 4” & 6” and pieces Four 4” or one 6” 350C 100A-4.5um PECVD.
Deposited Single Crystal, Poly and Amorphous Silicon tylanpoly Clean group N2, H2, SiH4 Pre-diff 4” 44 525-650C 100A-3um Standard polysilicon deposition at 620C. Dep rate ~137A/min. Amorphous Si programs available.

thermcopoly1 Clean group N2, H2, SiH4, GePH3, B2H6 Pre-diff 4” & 6” 44 525-650C 100A-3um Standard polysilicon deposition at 620C.  P and N doping available. Amorphous Si programs available.

thermcopoly2 Contaminated group N2, H2, SiH4, Ge  PH3, B2H6
4” & 6” 44 525-650C 100A-3um Standard polysilicon deposition at 620C.  P and N doping available.

epi2 Clean group N2, H2, SiH4, SiClH4, GeH4, PH3, AsH3, B3H6 Pre-diff 4” 1 600-1200C 50A-3um N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Deposited SiGe and Ge tylansige Clean group N2, H2, Ar, SiH4, Si2H6, GeH4 Pre-diff 4” 23 400-650C 100A-1um

thermcopoly2 Clean group N2, H2, SiH4, SiGe  PH3, B2H6 Pre-diff 4” & 6” 44 525-650C 100A-3um Standard polysilicon deposition at 620C.  P and N doping available.

epi2 Clean group N2, H2, SiH4, SiClH4, GeH4, Ph3, AsH3, B3H6 Pre-diff 4” 1 600-1200C 50A-3um N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
Atomic Layer Deposition ald (spectrum2) Clean group N2, H2, NH3, O3, H2O, TMA Pre-diff 4” 1 250-350C 10A-0.5um Deposits about 1A/sec of Al2O3. Very conformal.
Forming Gas Anneal tylanfga Semi-Clean group N2, 10%H2 in N2 PRS1000 at wbmetal 3” & 4” 50 250-500C ---
For standard metals deposited in gryphon only. N2 and Ar annealing available.

fga2 Contaminated group N2, Ar, 4%H2 in N2 Pre-diff or PRS1000 or PRX127 clean at wbgen only 4” & 6” 25 250-650C ---
Any material that won’t vaporize is okay. N2 and Ar annealing available.
Muffle Furnace thermolyne Contaminated group Air Any or none Pieces to 6” 25 500-1000C ---
Any material that won’t vaporize is okay

 

 

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