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Sidewall epitaxial piezoresistor process and characterisation for in-plane force sensing applications
Room temperature 1.6 μm electroluminescence from Ge light emitting diode on Si substrate
Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality
Ge on Si by Novel Heteroepitaxy for High Efficiency Near Infrared Photodetection
Fabrication of High-Quality p-MOSFET in Ge Grown Heteroepitaxially on Si
High-efficiency metal–semiconductor–metal photodetectors on heteroepitaxially grown Ge on Si
Defect Reduction of Ge on Si by Selective Epitaxy and Hydrogen Annealing
Low-Temperature, LPCVD and Solid Phase Crystallization of Silicon–Germanium Films
Effect of Isochronal Hydrogen Annealing on Surface Roughness and Threading Dislocation Density of Epitaxial Ge on Si
Germanium In Situ Doped Epitaxial Growth on Si for High-Performance n+/p Junction Diode
Germanium In Situ Doped Epitaxial Growth on Si for High-Performance n+/p-Junction Diode
High-Efficiency p-i-n Photodetectors on Selective-Area-Grown Ge for Monolithic Integration
High Performance n-MOSFETs with Novel Source/Drain on Selectively Grown Ge on Si for Monolithic Integration
Effect of isochronal hydrogen annealing on surface roughness and threading dislocation density of epitaxial Ge films grown on Si
Low Temperature Germanium Growth on Silicon Oxide Using Boron Seed Layer and In Situ Dopant Activation
Elastomer-supported cold welding for room temperature wafer-level bonding
Thin PDMS Films Using Long Spin Times or Tert-Butyl Alcohol as a Solvent
Mechanical characterization of bulk Sylgard 184 for microfluidics and microengineering
Characterization study of bonded and unbonded polydimethylsiloxane aimed for bio-microelectromechanical systems-related applications
Enhancement of the thermo-mechanical properties of PDMS molds for the hot embossing of PMMA microfluidic devices
Solvent Compatibility of Poly(dimethylsiloxane)-Based Microfluidic Devices
A Guide to Working with PDMS at SNF
15% Arsine 85% Nitrogen
Argon
Boron Trichloride
Boron Trifluoride
Carbon Dioxide (Matheson)
Carbon Dioxide (Praxair)
Chlorine
Disilane
Dichlorosilane
Halocarbon 14
Halocarbon 23
Halocarbon 22
Halocarbon 116
Helium
Hydrochloric Acid 37%
Hydrogen Peroxide 3%
Hydrogen Bromide
Aluminum (Al) Etchant, discontinued as of 2/14/14
LOL 2000
Methane
MF-CD-26 Developer
Nitrogen Trifluoride
Nitrogen
Gold (Au) Etchant
Nitric Acid 70%
Nitrous Oxide (Air Products)
Nitrous Oxide (Praxair)
Boron Tribromide (BBr3)
PRS 1000
Silane (Air Products)
Silane (Praxair)
Silicon Tetrachloride
SPR 220-7.0 Positive Photoresist
SPR 955CM-0.7 Positive Photoresist
SPR 220-3.0 Positive Photoresist
Sulfur Hexafluoride (Praxair)
Sulfur Hexafluoride (Air Products)
UVN 30-0.8 DUV Photoresist
Ultrasol 2EX MSDS
Ultrasol S10 MSDS
A-174 Silane
MICRO-90 CONCENTRATED CLEANING SOLUTION
Parylene Dimer DPX-C
TrimethylAluminum
Tetrakis(dimethylamido)titanium(IV) (TDMA-Ti) MSDS
Bis(ter-butylimino)bis(dimethylamino)tungsten(VI) MSDS
Tetrakis(dimethylamido)hafnium(IV) MSDS
Tungsten Hexacarbonyl W(CO)6
Tetrakis(dimethylamido)zirconium(IV) (TDMA-Zr) MSDS
Tetrakis(ethylmethylamido)zirconium(IV) (TEMA-Zr) MSDS
Tris(diethylamido)(tert-butylimido)tantalum(V)
Tris[dimethylamino]Silane (3DMAS) MSDS
(3-Aminopropyl)triethoxysilane (APTES) MSDS
Tris(tert-botoxy)silanol MSDS
Trimethyl(methylcyclopentadienyl)platinum(IV) MSDS
Bis(cyclopentadienyl)nickel (nickelocene) MSDS
Bis(ethylcyclopentadienyl)ruthenium(II) MSDS
Diethylzinc (DEZ) MSDS
Tris[N,N-bis(trimethylsilyl)amide]yttrium MSDS
Cyclopentadienyl-indium MSDS
Tetrakis(dimethylamino)tin(IV) TDMA-Sn MSDS
Tris(cyclopentadienyl)yttrium (3CpY) MSDS
Tetramethyl-Tin
Trimethylgallium
Bis(1,2,4-triteriarybutylcyclopentadienyl)-strontium
Bis(ethylcyclopentadienyl)nickel(II) MSDS
Ferrocene
Titanium (IV) Isopropoxide (TTIP) MSDS
Bis(n-propyltetramethycyclopentadienyl)barium MSDS
Bis(pentamethylcyclopentadienyl)barium, 1,2-dimethoxyethane adduct MSDS
Bis(cyclopentadienyl)cobalt (II) MSDS
Fe amidinate MSDS (Accudep Iron)
Pentakis(dimethylamino)tantalum(V)
MSDS Nickel bis(N,N'- ditertialbutylacetamidinate) AKA Dow Accudep-Ni
MSDS- Molybdenum hexacarbonyl
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Rapid Thermal AnnealingAll-Win 610 Rapid Thermal Process SystemsThe All-Win Rapid Thermal Process (RTP) systems are capable of annealing substrates in a variety of ambients: N2, Ar, N2:H2 forming gas, O2 for oxidizing Si, N2O for oxynitride, and NH3 for nitridation. Each system has a cold wall, quartz chamber, which is heated with top and bottom arrays of high intensity halogen lamps using a closed-loop temperature control. Document Actions |
Etch Profiles
Throttle vs Pressure for SF6 and C4F8
Matlab File: 49 point wafer mapping
Optical Microscopy for Labmembers Working at SNF
Emergency Map (gif)
Parylene Coater Spec
KS Mask Aligner Training