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Summary of Chemical Vapor Deposition Systems Available at SNF

This chart is an over view of the capabilities of all the CVD systems at SNF.

 

Process Coral Name Substrates Accepted Gases Cleaning required Substrate Shape accepted Number of Samples Per Run Temp Range Film Thickness Range Comments
Deposited Oxide tylanbpsg Clean and semi-clean groups N2, O2, SiH4, PH3 Pre-diff or PRS1000 or PRX127 clean at wbmetal 4” 26 clean, 26 semi-clean 300-450C 100A-3um


ThermcoLTO
Gold group (limits on material vapor pressure)
N2, O2, SiH4, PH3




4” & 6” and pieces



   26


300-450C


100A-3um


     Teos2 Clean group N2, O2, TEOS Pre-diff 4” & 6” 45 450-680C 50A-5um Very conformal.

sts Contaminated group N2, O2, NH3, 2%SiH4 in N2 Pre-diff or PRS1000 or PRX127 clean at wbgen only 4” & 6” and pieces Four 4” or one 6” 350C 100A-4.5um PECVD.
   ccp-dep  All  N2, N2O, NH3, CH4, SiH4 (5% in He), He, SF6  Pre-diff or PRS1000 or PRX127 clean at wbgen only  4"  4  100C-350C  100A-4.0um  PECVD
   hdpcvd  All  N2,Ar, O2, SiH4 (100%), SF6
  Pre-diff or PRS1000 or PRX127 clean at wbgen only  4"  1  100-150C  500A-4um  PECVD
Deposited Nitride tylannitride Clean group N2, NH3, DCS Pre-diff 4” 44 785-850C 100A-2um Stociometric, low stress (~150mPa) and super low stress (~50mPa) programs available

thermconitride1 Clean group N2, NH3, DCS Pre-diff 4” & 6” 44 785-850C 100A-2um Stociometric and low stress (~150mPa) programs available

sts Contaminated group N2, O2, NH3, 2%SiH4 in N2 Pre-diff or PRS1000 or PRX127 clean at wbgen only 4” & 6” and pieces Four 4” or one 6” 350C 100A-4.5um PECVD.
   ccp-dep  All  N2, N2O, NH3, CH4, SiH4 (5% in He), He, SF6  Pre-diff or PRS1000 or PRX127 clean at wbgen only  4"  4  100-350C  100A-1.0um  PECVD
   hdpcvd  All   N2,Ar, O2, SiH4 (100%), SF6    Pre-diff or PRS1000 or PRX127 clean at wbgen only  4"  1  100-150C  500A-4um  PECVD
Deposited Single Crystal, Poly and Amorphous Silicon tylanpoly Clean group N2, H2, SiH4 Pre-diff 4” 44 525-650C 100A-3um Standard polysilicon deposition at 620C. Dep rate ~137A/min. Amorphous Si programs available.

thermcopoly1 Clean group N2, H2, SiH4, PH3, B2H6 Pre-diff 4” & 6” 44 525-650C 100A-3um Standard polysilicon deposition at 620C.  P and N doping available. Amorphous Si programs available.

thermcopoly2 Gold group (limits on material vapor pressure)
N2, H2, SiH4, SiGe  PH3, B2H6 Pre-diff 4” & 6” 44 525-650C 100A-3um Standard polysilicon deposition at 620C.  P and N doping available.

epi2 Clean group N2, H2, SiH4, SiClH4, GeH4, Ph3, AsH3, B3H6 Pre-diff 4” 1 600-1200C 50A-3um N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr
   ccp-dep  All  N2, N2O, NH3, CH4, SiH4 (5% in He), He, SF6  Pre-diff or PRS1000 or PRX127 clean at wbgen only  4"  4  100-350C  100A-1.0um  PECVD
   hdpcvd  All   N2,Ar, O2, SiH4 (100%), SF6    Pre-diff or PRS1000 or PRX127 clean at wbgen only  4"  1  100-150C  500A-4um  PECVD
Deposited SiGe and Ge tylansige Clean group N2, H2, Ar, SiH4, Si2H6, GeH4 Pre-diff 4” 23 400-650C 100A-1um

thermcopoly2 Clean group N2, H2, SiH4, SiGe  PH3, B2H6 Pre-diff 4” & 6” 44 525-650C 100A-3um Standard polysilicon deposition at 620C.  P and N doping available.

epi2 Clean group N2, H2, SiH4, SiClH4, GeH4, Ph3, AsH3, B3H6 Pre-diff 4” 1 600-1200C 50A-3um N and P doping available- intrinsic to 5E19 Operating pressure range is 5-300Torr

Deposited SiC 

 ccp-dep  All  N2, N2O, NH3, CH4, SiH4 (5% in He), He, SF6
 Pre-diff or PRS1000 or PRX127 clean at wbgen only  4"  4  100-350C  100A-1.0um  PECVD

 

 

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