Thermal Alumina from Water
Fiji1 vs. Fiji2 vs. Fiji3 vs. Savannah, Plasma vs. Thermal data
Fiji1 vs. Fiji2, Plasma vs. Thermal data
Thank you to Kye Okabe for providing this data showing roughness and uniformity of Fiji1 and Fiji2 plasma and thermal Al2O3 and HfO2 films.
Thermal Al2O3 Exposure mode deposition on GaAs nanowires. Rate is 10nm/100 cycles
Images courtesy of Dr. Xiaoxing Xu
50nm Al2O3 at the top of GaAs nanowire
50nm Al2O3 at bottom of GaAs nanowires
Al2O3 Deposition rate of 1.0A/cycle for standard recipe
(Thanks to Rebecca Schuster, Gaurav Thareja, Alice Wu, Shimeng Yu, and Ju Hyung Nam for their help with data collection.)
The deposition plot A is from the summer of 2010 and showed a deposition rate of almost 1.1A/cycle. The deposition plot B is from Autumn 2010 and shows a deposition rate of 1.0A/cycle. The deposition rate is being tracked by process monitoring shown below.
The CV measurements were done with capacitors with area of 100um x 100um and there is a strong effect from forming gas anneal. The MOSCAPs were Al2O3 deposited on Si with a sputtered Al upper electrode (defined by wet etch) and a 325C 30min FGA. Additionally, from CV curves the dielectric constant can be determined to be ~6.75.
The deposition rate has a weak dependence on chamber temperature.
Breakdown Voltage of Al2O3 ALD films.
Leakage Current in Al2O3 ALD films.