Thermal HfO2 from Water
Fiji1 vs. Fiji2 vs. Fiji3 vs. Savannah, Plasma vs. Thermal dataThanks to Max Shulaker and Kye Okabe for the data in their EE412 Presentation and Report from Spring Quarter 2014.
Fiji2 vs. Savannah Breakdown Voltage data
Thank you to Dr. Junghyun Park for providing this data showing breakdown voltage of HfO2 films on Savannah vs. Fiji2.
Fiji1 vs. Fiji2, Plasma vs. Thermal data
Thank you to Kye Okabe for providing this data showing roughness and uniformity of Al2O3 and HfO1 films.
Data collected from Savannah:
HfO2 Deposition rate of .99A/cycle for standard recipe
(Thanks to Woo-Shik Jung and for his help with data collection.)
Deposition rate of Hafnia ALD at 200C (note the native oxide of the Si wafer was also tracked and plotted on this graph).
Process monitoring for hafnia on the savannah over time.
Temperature dependence of the deposition rate of hafnia. Note that this dependence is much stronger than observed with alumina and titania.
AFM measurements of film roughness with variation in deposition temperature. Little dependence on temperature is observed and the film has a roughness on the order of a polished Si wafer.
Representative CV and normalized CV for MOS capacitors fabricated with hafnia as the insulator and Al as the metal layer. The films are treated with a 300C FGA anneal. From this data we can extract the following material parameters:
|Dielectric Constant||15 (at 1MHz)|
|Doping Concentration||1.5 x 1016 /cm3|
|Fixed Charge Density||2.9 x 1012 / cm2 (negative)|
Breakdown voltage and leakage current for Hafnia ALD at various temperatures (with the number of cycles varied to provide ~100A +/- 5A in each case).
The following data is from Fiji1: