Thermal Alumina from Water
Al2O3 Deposition rate of 1.0A/cycle for standard recipe
(Thanks to Rebecca Schuster, Gaurav Thareja, Alice Wu, Shimeng Yu, and Ju Hyung Nam for their help with data collection.)
The deposition plot A is from the summer of 2010 and showed a deposition rate of almost 1.1A/cycle. The deposition plot B is from Autumn 2010 and shows a deposition rate of 1.0A/cycle. The deposition rate is being tracked by process monitoring shown below.
The CV measurements were done with capacitors with area of 100um x 100um and there is a strong effect from forming gas anneal. The MOSCAPs were Al2O3 deposited on Si with a sputtered Al upper electrode (defined by wet etch) and a 325C 30min FGA. Additionally, from CV curves the dielectric constant can be determined to be ~6.75.
The deposition rate has a weak dependence on chamber temperature.
Breakdown Voltage of Al2O3 ALD films.
Leakage Current in Al2O3 ALD films.