Thermal HfO2 from Water
Data collected from Savannah:
HfO2 Deposition rate of .99A/cycle for standard recipe
(Thanks to Woo-Shik Jung and for his help with data collection.)
Deposition rate of Hafnia ALD at 200C (note the native oxide of the Si wafer was also tracked and plotted on this graph).
Process monitoring for hafnia on the savannah over time.
Temperature dependence of the deposition rate of hafnia. Note that this dependence is much stronger than observed with alumina and titania.
AFM measurements of film roughness with variation in deposition temperature. Little dependence on temperature is observed and the film has a roughness on the order of a polished Si wafer.
Representative CV and normalized CV for MOS capacitors fabricated with hafnia as the insulator and Al as the metal layer. The films are treated with a 300C FGA anneal. From this data we can extract the following material parameters:
|Dielectric Constant||15 (at 1MHz)|
|Doping Concentration||1.5 x 1016 /cm3|
|Fixed Charge Density||2.9 x 1012 / cm2 (negative)|
Breakdown voltage and leakage current for Hafnia ALD at various temperatures (with the number of cycles varied to provide ~100A +/- 5A in each case).
The following data is from Fiji1: