Skip to content. | Skip to navigation

Sections
Personal tools
You are here: Home / Equipment / Chemical Vapor Deposition / Epi papers/images / Room temperature 1.6 μm electroluminescence from Ge light emitting diode on Si substrate
Navigation
 

Room temperature 1.6 μm electroluminescence from Ge light emitting diode on Si substrate

Szu-Lin Cheng, Jesse Lu, Gary Shambat, Hyun-Yong Yu, Krishna Saraswat, Jelena Vuckovic, and Yoshio Nishi Abstract: We report the room temperature electroluminescence (EL) at 1.6 μm of a Ge n+/p light emitting diode on a Si substrate. Unlike normal electrically pumped devices, this device shows a superlinear luminescence enhancement at high current. By comparing different n type doping concentrations, we observe that a higher concentration is required to achieve better efficiency of the device. Thermal enhancement effects observed in temperature dependent EL spectra show the capability of this device to operate at room temperature or above. These detailed studies show that Ge can be a good candidate for a Si compatible light emitting device.

PDF document icon 920EE6D4-BDB9-137E-CE8CB42EC7FDA0F3_180244.pdf — PDF document, 409 kB (419243 bytes)

Document Actions