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Effects of hydrogen annealing on heteroepitaxial-Ge layers on Si: Surface roughness and electrical quality

A. Nayfeh, C. O. Chui, . K. C. Saraswat and T. Yonehara -- We have studied the effect of hydrogen annealing on the surface roughness of germanium (Ge) layers grown by chemical vapor deposition on silicon using atomic force microscopy and cross-sectional high resolution scanning electron microscopy (HR-SEM). Our results indicate a strong reduction of roughness that approaches 90% at 825 °C. The smoother Ge surface allowed for the fabrication of metal-oxide-semiconductor capacitors using germanium oxynitride sGeOxNyd as the gate dielectric. Electrical quality was studied using high frequency capacitance–voltage characteristic of epi-Ge showing negligible hysteresis. We discuss the results in terms of Ge–H cluster formation, which lowers the diffusion barrier, allowing for higher diffusivity and surface mobility. The temperature dependence shows tapering off for temperatures exceeding 800 °C, indicating a barrier reduction of ,92 meV. © 2004 American Institute of Physics. [DOI: 10.1063/1.1802381]

PDF document icon ApplPhysLett_85_2815.pdf — PDF document, 380 kB (389291 bytes)

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