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Defect Reduction of Ge on Si by Selective Epitaxy and Hydrogen Annealing

Hyun-Yong Yu, J. Park, A. Okyay and K. Saraswat We demonstrate a promising approach for the monolithic integration of Ge-based nanoelectronics and nanophotonics with Silicon: the selective deposition of Ge on Si by Multiple Hydrogen Annealing for Heteroepitaxy (MHAH). Very high quality Ge layers can be selectively integrated on Si CMOS platform with this technique. We confirm the reduction of dislocation density in Ge layers using transmission electron microscope (TEM) analysis and Schottky diode electrical behavior. In addition, the analysis of the growth directions and the geometrical shape of the resulting films based on the growth conditions provide further insight to the selective Ge growth mechanism

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