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Effect of isochronal hydrogen annealing on surface roughness and threading dislocation density of epitaxial Ge films grown on Si

Shin-ishi Kobayashia,Y. Nishib, K. C. Saraswat --We report the effect of hydrogen annealing on the surface roughness and threading dislocation density (TDD) of germanium (Ge) films grown on silicon (Si) substrates by reduced-pressure chemical vapor deposition (RPCVD). The surface roughness initially decreased with an increase in the annealing temperature. At annealing temperatures greater than 650 °C the film thickness varied owing to surface undulations, leading to an increase in the surface roughness. Although high-temperature annealing at 850 °C is effective for reducing TDD, the surface roughness of a 150-nm-thick Ge film annealed at 650 °C reaches a minimum value (~ 0.7 nm).

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