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Fabrication of High-Quality p-MOSFET in Ge Grown Heteroepitaxially on Si

Ammar Nayfeh, Chi On Chui, Takao Yonehara, and Krishna C. Saraswat We have successfully demonstrated high-performance p-MOSFETs in germanium grown directly on Si using a novel heteroepitaxial growth technique, which uses multisteps of hydrogen annealing and growth to confine misfit dislocations near the Ge–Si interface, thus not threading to the surface as expected in this 4.2% lattice-mismatched system. We used a low thermal budget process with silicon dioxide on germanium oxynitride (GeO N ) gate dielectric and Si0 75Ge0 25 gate electrode. Characterization of the device using cross-sectional transmission electron microscopy and atomic force microscopy at different stages of the fabrication illustrates device-quality interfaces that yielded hole effective mobility as high as 250 cm2/Vs.

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