Skip to content. | Skip to navigation

Sections
Personal tools
You are here: Home / Equipment / Chemical Vapor Deposition / Epi papers/images / Germanium In Situ Doped Epitaxial Growth on Si for High-Performance n+/p Junction Diode
Navigation
 

Germanium In Situ Doped Epitaxial Growth on Si for High-Performance n+/p Junction Diode

Hyun-Yong Yu, Szu-Lin Cheng, Peter B. Griffin, Yoshio Nishi, and Krishna C. Saraswat--We demonstrate an abrupt and box-shaped n+/p junction in Ge with a high level of activation of n-type-dopant phosphorus (P) using in situ doping during epitaxial growth. The temperature dependence of dopant activation was investigated associated with the shallower and abrupt junction formation. In addition, we have fabricated high-performance Ge n+/p-junction diodes at 400 ◦C–600 ◦C, based on the in situ doping technique. Excellent diode characteristics having a 1.1 × 104 on/off ratio and a high forward current density (120 A/cm2 at 1 V) are obtained in an n+/p diode at 600-◦C in situ doping.

PDF document icon Germanium In Situ Doped Epitaxial Growth on Si.pdf — PDF document, 276 kB (283461 bytes)

Document Actions