Skip to content. | Skip to navigation

Sections
Personal tools
You are here: Home / Equipment / Chemical Vapor Deposition / Epi papers/images / High Performance n-MOSFETs with Novel Source/Drain on Selectively Grown Ge on Si for Monolithic Integration
Navigation
 

High Performance n-MOSFETs with Novel Source/Drain on Selectively Grown Ge on Si for Monolithic Integration

Hyun-Yong Yu, M. Kobayashi, W. S. Jung, Y. Nishi and K. C. Saraswat -- We demonstrate high performance Ge n-MOSFETs with novel raised source/drain fabricated on high quality Ge selectively grown on Si. S/D regions are formed by in-situ doping process for very low series resistance and abrupt and shallow junctions. The highest Ion for (100) Ge n-MOSFETs to-date is achieved with excellent Ion/Ioff ratio(4x103) and high Ion(3.23μA/µm).

PDF document icon High Performance n-MOSFETs with Novel Source-Drain.pdf — PDF document, 575 kB (589499 bytes)

Document Actions