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Germanium In Situ Doped Epitaxial Growth on Si for High-Performance n+/p-Junction Diode

Hyun-Yong Yu, Masato Ishibashi, Jin-Hong Park, Masaharu Kobayashi, and Krishna C. Saraswat --We successfully demonstrate Ge pMOSFET integrated on Si. In this process, Ge is grown selectively on Si on patterned SiO2 by heteroepitaxy, and pMOSFET is fabricated with gate dielectric stack consisting of thin GeO2 and Al2O3 and Al metal gate electrode. Fabricated devices show ∼80% enhancement over the Si universal hole mobility. These results are promising toward monolithically integrating Ge MOSFETs with Si CMOS VLSI platform.

PDF document icon p-Channel Ge MOSFET by Selectively.pdf — PDF document, 318 kB (325652 bytes)

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