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Ge on Si by Novel Heteroepitaxy for High Efficiency Near Infrared Photodetection

Ali K. Okyay, Ammar M. Nayfeh and Krishna C. Saraswat We report germanium-on-silicon MSM photodetectors with responsivities as high as 0.85A/W at 1.55μm and 2V reverse bias, and exhibit reverse dark currents of 100mA/cm2 and external quantum efficiency up to 68%.

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