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Low Pressure CVD

LPCVD systems (Low Pressure Chemical Vapor Deposition of various thin films)

Teos2

Teos2 allows LPCVD deposition of silicon dioxide, using tetraethyl orthosilicate (TEOS) which can provide a more conformal coating at lower temperature than tylanbpsg films. This is a six inch tube.

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ThermcoNitride

Silicon nitride (or nitride or Si3N4) is deposited at moderately high temperatures (~800C) and low pressure (~250 mtorr), using dichlorosilane (SiCl2H2) and ammonia (NH3). This furnace handles wafer up to 6 inch.

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ThermcoLTO

Silicon dioxide (SiO2) is deposited at between 300 and 450C (depending on needs... ie metals 300C), low pressure (~350 mtorr), from silane and oxygen with or without phosphine doping. Doped LTO is also called PSG, or phosphosilicate glass). The refractive index of the film depends on the phosphorous content, lower deposition rate. The refractive index is also influenced by the temperature of the deposition. Six inch. Gold group

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TylanNitride

Silicon nitride (or nitride or Si3N4) is deposited at moderately high temperatures (~800C) and low pressure (~250 mtorr), using dichlorosilane (SiCl2H2) and ammonia (NH3). The deposition rate roughly ~30A/min for 4 inch wafers and ~35A/min for 3 inch wafers (depending on the specific recipe used and loading).. Several different nitride deposition recipes are offered, which differ primarily in the resulting film stress value. For specific information about the recommended low stress nitride recipe (LSN850) which included recommended procedures for film characterization, please refer to the characterization report (courtesy of Eehern Wong).

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TylanPoly

Polycrystalline silicon (also called "poly-Si" or "poly") is deposited at a low pressure (~500 mtorr) using silane (SiH4). The tube has a sloping temperature profile. Deposition temperature is ~620C for polysilicon and ~560C for amorphous silicon. The deposition rate for poly silicon is ~125A/minute for 3 inch wafers and ~137A/minute for 4 inch wafers.

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TylanSiGe

Six inch silicon germanium poly tube.

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TylanBPSG

Silicon dioxide (SiO2) is deposited at between 300 and 450C (depending on needs... ie metals 300C), low pressure (~350 mtorr), from silane and oxygen with or without phosphine doping. Doped LTO is also called PSG, or phosphosilicate glass). The refractive index of the film depends on the phosphorous content, lower deposition rate. The refractive index is also influenced by the temperature of the deposition. The oxide deposition rate is mostly dependent on the temperature and is ~ 175A/min at 400C for 4 inch wafers (~200A/min for 3 inch wafers).

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LPCVD tests

folder contains results of LPCVD process quals

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Thermcopoly

This folde contains information on Thermcopoly including operating instructs, basic information and characterization

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Thermcopoly2

This folder contains information on Thermcopoly2 including operating instructs, basic information and characterization studies.

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