Skip to content. | Skip to navigation

Sections
Personal tools
You are here: Home / Equipment / Chemical Vapor Deposition / Low Pressure CVD

Low Pressure CVD

LPCVD systems (Low Pressure Chemical Vapor Deposition of various thin films)

Teos2

Teos2 allows LPCVD deposition of silicon dioxide, using tetraethyl orthosilicate (TEOS) which can provide a more conformal coating at lower temperature than tylanbpsg films. This is a six inch tube.

Teos2 - Read More…

ThermcoNitride

Silicon nitride (or nitride or Si3N4) is deposited at moderately high temperatures (~800C) and low pressure (~250 mtorr), using dichlorosilane (SiCl2H2) and ammonia (NH3). This furnace handles wafer up to 6 inch.

ThermcoNitride - Read More…

ThermcoLTO

Silicon dioxide (SiO2) is deposited at between 300 and 450C (depending on needs... ie metals 300C), low pressure (~350 mtorr), from silane and oxygen with or without phosphine doping. Doped LTO is also called PSG, or phosphosilicate glass). The refractive index of the film depends on the phosphorous content, lower deposition rate. The refractive index is also influenced by the temperature of the deposition. Six inch. Gold group

ThermcoLTO - Read More…

TylanNitride

Silicon nitride (or nitride or Si3N4) is deposited at moderately high temperatures (~800C) and low pressure (~250 mtorr), using dichlorosilane (SiCl2H2) and ammonia (NH3). The deposition rate roughly ~30A/min for 4 inch wafers and ~35A/min for 3 inch wafers (depending on the specific recipe used and loading).. Several different nitride deposition recipes are offered, which differ primarily in the resulting film stress value. For specific information about the recommended low stress nitride recipe (LSN850) which included recommended procedures for film characterization, please refer to the characterization report (courtesy of Eehern Wong).

TylanNitride - Read More…

TylanSiGe

Six inch silicon germanium poly tube.

TylanSiGe - Read More…

TylanBPSG

Silicon dioxide (SiO2) is deposited at between 300 and 450C (depending on needs... ie metals 300C), low pressure (~350 mtorr), from silane and oxygen with or without phosphine doping. Doped LTO is also called PSG, or phosphosilicate glass). The refractive index of the film depends on the phosphorous content, lower deposition rate. The refractive index is also influenced by the temperature of the deposition. The oxide deposition rate is mostly dependent on the temperature and is ~ 175A/min at 400C for 4 inch wafers (~200A/min for 3 inch wafers).

TylanBPSG - Read More…

LPCVD tests

folder contains results of LPCVD process quals

LPCVD tests - Read More…

Thermcopoly

This folder contains information on Thermcopoly including operating instructs, basic information and characterization

Thermcopoly - Read More…

Thermcopoly2

This folder contains information on Thermcopoly2 including operating instructs, basic information and characterization studies. Qualification Runs Below are the historical qualification run data for Thermcopoly 2

Thermcopoly2 - Read More…

CVD-Nanotube

The First Nano CVD furnace is dedicated to carbon nanotube synthesis and can accommodate multiple pieces or a 4" wafer. Methane, hydrogen and ethanol are available as process gases and thus provide versatility for both SWCNT growth as well as vertical forest growth. Process recipes for horizontally aligned SWCNT growth on ST-cut quartz (available from the SNF stockroom) have been optimized and are available to the user, with typical yields of 1-5 SWCNTs per micron depending on the catalyst used.

CVD-Nanotube - Read More…

Aixtron-Graphene

The Aixtron Black Magic CVD furnace is dedicated to graphene synthesis and can accommodate multiple pieces or a single 4" wafer, with methane and hydrogen available as process gases. Process recipes have been optimized and are available to the user for the following: Cu foil (available from SNF stockroom or provided by the user), Cu-coated substrates, and Ni substrates. The recipes on Cu have been characterized to give excellent monolayer coverage with minimal areas of bilayers and low defectivity. Ni substrates will give multi-monolayer growth.

Aixtron-Graphene - Read More…

Document Actions