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Polycrystalline silicon (also called "poly-Si" or "poly") is deposited at a low pressure (~500 mtorr) using silane (SiH4). The tube has a sloping temperature profile. Deposition temperature is ~620C for polysilicon and ~520C for amorphous silicon. This furnace can handle wafers up to 6 inch and is plumbed with Ge, PH3 and B2H6.

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