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CCP PECVD Start Up Process Results

Annotated results of the parameter matrix used during the start up procedure of the four materials offered on the tool; SiN, SiO2, a-Si and SiC.
Initial Process for Plasma-Therm CCP-Dep PECVD System 6/19/2012  jpm









Nitride
Process Results
Run # RF (Watts) P (mT) 5% SiH4in He (sccm) NH3 (sccm) N2 (sccm) He (sccm) Temp (lower) Temp (upper) Time (min) N2 % NH3/SiH4 Total flow Index thickness (Å) Rate (Å/min) Uf (±, %) 8mm Stress (MPa)
Factory 100 1000 200 4 400 1000 300 60 6.00 0 0.40 1604 1.98 943 157 ±2.6 ~ 60
040612a 100 1000 200 4 400 1000 300 70 6.00 0 0.40 1604 2.10 825 137 5.33   NH3 Line not purged properly
041112a 100 1000 200 4 400 1000 300 70 6.00 0 0.40 1604 2.10 825 137 5.33   NH3 Line not purged properly
041212b 100 1000 200 4.5 400 1000 300 70 6.00 0 0.45 1604.5 2.08 834 139 4.21   NH3 Line not purged properly
041212c 100 1000 200 5.5 400 1000 300 70 6.00 0 0.55 1605.5 2.03 847 141 3.24   Corrected NH3 problem
041212d 100 950 200 6 400 1000 300 70 6.00 0 0.60 1606 2.01 883 147 2.29  
041212e 100 950 200 6 400 1000 300 70 6.00 0 0.60 1606 2.01 860 143 2.67    
041212f 100 950 200 6 400 1000 300 70 32.00 0 0.60 1606 2.05 4477 140    
052312a 100 950 200 6 400 1000 350 70 7.00 0 0.60 1606 2.03 1006 144    
052312b 100 950 200 6 400 1000 350 70 5.60 0 0.60 1606 2.03 789 141    
052412a 100 1000 200 4 400 1000 350 70 6.00 0 0.40 1604          
052412a 100 1000 200 4 400 1000 350 70 6.00 0 0.40 1604          
060512a 100 950 200 6 400 1000 300 70 10.00 0 0.60 1606   1470 147    
061912a 100 950 200 6 400 1000 300 70 32.00 0 0.60 1606 2.02 4682 146 3.37 29.5
061912b 100 950 200 6 400 1000 350 70 32.00 0 0.60 1606 2.02 4531 142 2.85 33.8

Oxide
Process Results


Run # RF (Watts) P (mT) 5% SiH4in He (sccm) N2O (sccm) He (sccm) Temp (lower) Temp (upper) Time (min) N2O% NO2/SiH4 Total flow Index thickness (Å) Rate (Å/min) Uf (±, %) 8mm Stress (MPa)
041112a 200 800 250 1500 800 300 70 6.00 58.82% 6.00 2550 1.46 5172 862 5.37%  
041212b 200 1200 250 1500 800 300 70 6.00 58.82% 6.00 2550 1.46 4281 714 5.40  
041212c 200 1100 250 1700 800 300 70 4.00 61.82% 6.80 2750 1.46 3063 766 3.40    
 
052512a 200 1100 250 1700 800 250 70 3.00 61.82% 6.80 2750
2186 729


Nanpspec
052512b 200 1100 250 1700 800 250 70 2.00 61.82% 6.80 2750
1486 743


Nanpspec
053112a 200 1100 250 1700 800 300 70 24.00 61.82% 6.80 2750
? ?


Nanpspec
060512a 200 1100 250 1700 800 350 70 5.70 61.82% 6.80 2750
4560 800


Nanpspec
060512b 200 1100 250 1700 800 250 70 1.50 61.82% 6.80 2750
1125 750


Nanpspec
061512a,b,c,d 200 1100 250 1700 800 300 70 1.00 61.82% 6.80 2750
787 787 <2.0

9pt, 6 w, Nanospec
061912a 200 1100 250 1700 800 300 70 10.00 61.82% 6.80 2750 1.47 7600 760 2.01 -298
061912b 200 1100 250 1700 800 350 70 10.00 61.82% 6.80 2750 1.47 7703 770



a-Si
Process Results
Run # RF (Watts) P (mT) 5% SiH4in He (sccm) N2O (sccm) N2 (sccm) He (sccm) Temp (lower) Temp (upper) Time (min) N2 % He/SiH4 Total flow Index (assumed) thickness (Å) Rate (Å/min) Uf (±, %) 8mm Stress (MPa)
Factory 25 1500 800 0 0 1000 300 60 10.00 0 44 1800   2180 217 ±4.5 ~ -500 (Comp)
041212a 25 1500 800 0 0 1000 300 70 10.00 0 44 1800 3.6 2182 218 3.55  
041212b 25 1600 800 0 0 1000 300 70 10.00 0 44 1800 3.6 2374 237 3.05  
041212c 25 1400 800 0 0 1000 300 70 10.00 0 44 1800 3.6 1917 192 3.55  
041212d 25 1500 700 0 0 1000 300 70 10.00 0 48 1700 3.6 2243 224 2.85  
041212e 25 1500 900 0 0 1000 300 70 10.00 0 41 1900 3.6 2119 212 3.33  
041212f 25 1500 750 0 0 1000 300 70 10.00 0 46 1750 3.6 2252 225 2.91    































SiC
 
Process Results
Run # RF (Watts) P (mT) 5% SiH4in He (sccm) N2O (sccm) N2 (sccm) He (sccm) CH4 Temp (lower) Temp (upper) Time (min) CH4/SiH4 He/SiH4 Total flow Index thickness (Å) Rate (Å/min) Uf (±, %) 8mm Stress (MPa)
Factory 25 1800 800 0 0 1000 270 300 60 4.00 6.75 44 2070 2.69 810 203 ±1.8 ~ 60
041312a 25 1800 800 0 0 1000 270 300 70 4.00 6.75 44 2070 2.7 752 188 ±1.4    

Uniformity measuements: (max-min)/(2x average)





















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