Etch Rates for Thin Films from CCP-DEP

Wet and dry etch rates are given for standard deposition recipes in ccp-dep. The etch rates are offered as a guide. Labmembers are encouraged to establish their own etch rates. The HF etch rates are in nm/min, and the etches were run at room temperature of 24.5C. The temperatures shown in the table are those measured in the BOE baths. Special thanks to star student worker Renata Hanna for processing the wafers and running the numbers. The MRC etch rates are in nm/min.

Wet HF Etch Rates

Etchant	SiO300-1	SiO350-1	SiN300-1	SiN350-1	SiO350D-1	Thermal Oxide
50 : 1 @ 24.5C	53.84	22.04	26.24	5.18	30.46	6.55
20: 1 BOE @ 24.5C	237.70	30.26	126.94	16.04	49.18	31.55 (@24.0C)
6 : 1 BOE @ 23C	767.29	55.28	442.84	28.98	257.98	100.72

Dry Etch Rates

Etcher	SiO300-1	SiO350-1	SiN300-1	SiN350-1	SiO350D-1	Thermal Oxide
Amtetcher Standard Recipe #3
Mrc- Oxide (O2=2sccm, CHF3=15sccm, 50mT, 100W, 600Vp)	62.51	62.76	-	-	97.53	61.27
Mrc- Nitride (O2=15sccm, CHF3=15sccm, 25mT, 50W, 500Vp)	-	-	34.25	46.86	-	16.54
Drytek4

Document Actions

Sections

Personal tools

Etch Rates for Thin Films from CCP-DEP

Wet HF Etch Rates

Dry Etch Rates