Etch Rates for Thin Films from CCP-DEP
Wet and dry etch rates are given for standard deposition recipes in ccp-dep. The etch rates are offered as a guide. Labmembers are encouraged to establish their own etch rates.
The HF etch rates are in nm/min, and the etches were run at room temperature of 24.5C. The temperatures shown in the table are those measured in the BOE baths.
Special thanks to star student worker Renata Hanna for processing the wafers and running the numbers.
The MRC etch rates are in nm/min.
Wet HF Etch Rates
Etchant |
SiO300-1 |
SiO350-1 |
SiN300-1 |
SiN350-1 |
SiO350D-1 |
Thermal Oxide |
---|---|---|---|---|---|---|
50 : 1 @ 24.5C |
53.84 | 22.04 |
26.24 | 5.18 | 30.46 | 6.55 |
20: 1 BOE @ 24.5C |
237.70 | 30.26 | 126.94 | 16.04 | 49.18 | 31.55 (@24.0C) |
6 : 1 BOE @ 23C |
767.29 |
55.28 | 442.84 | 28.98 | 257.98 | 100.72 |
Dry Etch Rates
Etcher |
SiO300-1 |
SiO350-1 |
SiN300-1 |
SiN350-1 | SiO350D-1 |
Thermal Oxide |
---|---|---|---|---|---|---|
Amtetcher Standard Recipe #3 |
||||||
Mrc- Oxide (O2=2sccm, CHF3=15sccm, 50mT, 100W, 600Vp) |
62.51 | 62.76 | - | - |
97.53 |
61.27 |
Mrc- Nitride (O2=15sccm, CHF3=15sccm, 25mT, 50W, 500Vp) |
- |
- | 34.25 | 46.86 | - | 16.54 |
Drytek4 |
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