Skip to content. | Skip to navigation

Sections
Personal tools
You are here: Home / Equipment / Chemical Vapor Deposition / PECVD / PlasmaTherm CCP-Dep / Film Stress for SiOx and SiNx Films

Film Stress for SiOx and SiNx Films

Stress due to film measured with StressTest equipment (lithography area).

This experiment measured the stress due to SiO and SiN films of the PECVD-CCP on test wafers.

 

Recipe  Date Stress (MPa tensile)
SiO 300-1
 01/31/13 -196.2
   02/23/13  -298.0
SiO 350-1
 01/31/13 -263.0
   02/21/13  -303.7
SiN 300-1
 01/31/13 **
   02/23/13  **
SiN 350-1
 01/31/13 47.3
   02/23/13  220.6

 

** For the SiN 300-1 measurements, the stresstest equipment reported a problem and the data could not be retrieved.

Document Actions