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Particle Counter

Study of the presence and density of pinholes in ccp films through measurements made on the particle counter in several ranges of particle size.

Procedure

The wafers were prepared through the following steps (certain steps were not performed on specific control wafers):

 

Wafers

The measurement wafers and the control wafers are described in the table below.

ID Type
Recipe Thickness Xactix
HF Bath
41 Measurement SiO 300-1
0.8 um
30 cycles
3 min
42 Measurement SiO 350-1
0.8 um 30 cycles 15 min
43 Measurement SiN 300-1
0.09 um
30 cycles 3 min
44 Measurement SiN 350-1
0.09 um 30 cycles 3 min
45 Control no film
0 no
no
46 Control SiO 300-1
0.8 um no
3 min
47 Control SiO 300-1
0.8 um no
15 min
48 Control SiN 300-1
0.09 um no
3 min
49 Control SiN 350-1
0.09 um no
3 min
50
Measurement SiO 300-1 0.09 um 20 cycles
3 min
51
Measurement SiO 350-1 0.09 um 20 cycles 3 min
52
Measurement SiN 300-1 0.09 um 20 cycles 3 min
54
Measurement SiN 350-1 0.09 um 20 cycles 3 min

 

Steps

1. Film deposition

The films were deposited with the recipes on the table below. The specific thickness of each wafer is given on the table of wafer IDs.

Recipe Substrate Temp Heat Exchanger Temp 
 SiO 300-1
 300C  60C
 SiO 350-1  350C  60C
 SiN 300-1  300C  60C
 SiN 350-1  350C  60C


2. Xactix Etch

The wafers were etched according with cycles of 30 at 3Torr of XeF2. The number of cycles of each wafer is given on the table of wafer IDs.


3. HF Etch

The films were stripped in BOE 6:1 bath. The duration of the bath for each wafer is given on the table of wafer IDs.

 

4. Particle Counter

The number of particles present and the area of the wafer covered by them was measured for different ranges of particle sizes, according to the table below. These characteristics were measured with the Particle Counter in the lithography area.

 

Max Size (um2)
Threshold (um2) Edge Rejection (mm)
Front Rejection (mm)
 256  8  5  5
 512  16  5  5
 1024  32  5  5

 

Results

Number of Particles

Results given for each range of particles.

Wafer ID
Max Size = 256
Max Size = 512
Max Size = 1024
41 569  370  253
42 418  267  187
43 809  471  355
44 1026  650  429
45 51  36  26
46 292  181  121
47 150  85  55
48 143  78  48
49  83  39  19
50
796 555 374
51
8400 7325 6258
52
266 164 108
54
230 150 124


Area Covered by Particles

Results given for each range of particles in mm2.

Wafer ID
Max Size = 256
Max Size = 512
Max Size = 1024
41  2.93  2.48  1.64
42  7.49  6.50  5.84
43  42.70  42.93  42.92
44  322.73  42.36  42.95
45  0.13  0.07  0.03
46  3.92  2.56  2.07
47  1.15  0.99  0.36
48  0.46  0.09  0.07
49  0.87  0.55  0.56
50
6.20 2.58 1.50
51
38.68 17.94 9.02
52
12.30 12.01 11.83
54
9.46 8.24 6.33

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