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Procedures for Qual

Detailed steps on how the quals are run

The quals are run in the following sequence of steps:


Requires two test runs. One for SiO and one for SiN

1. set standard temperatures  to 60C (heat exchanger 1) and 350C (substrate 1)

2. preparing for run:

   A. run clean350 until chamber thickness is 0

   B. run recipe that is going to be used for the film to ensure the chamber is covered with the same material. for SiO run, the recipe will be SiO350-1 for 2 minutes (140 nm). for SiN, the recipe will be SiN350-1 for 2 minutes (30 nm).

   C. clean the wafer in the wbclean-1/2 with 10 min in NH4OH bath, 10 min in HCl bath, and 30 seconds in 50:1 HF bath

3. run the no film measurement on the StressTest

   A. save file as ccpqx, where ccp stands for the machine, q for qual, and x is the number of the qual wafer

   B. id = qx

   C. comment = date

4. deposit films

   A. for SiO film, use recipe SiO350-1 for 6.5 min

   B. for SiN film, use recipe SiN350-1 for 35 min

5. run the single StressTest measurement

   A. report stress in MPa

6. run the measurements on the Woollam (thickness and refractive index)


   1. run the measurements on the Woollam (thickness and refractive index) using STS PECVD Nitride and Silicon Oxide (100 - 10,000 Ang) respectively

A. report average thickness and standard deviation in nm (Woollam is in A)

   B. report index of refraction at 633nm

2. perform HF etch on BOE 6:1 for 30s

   A. measure bath temperature (let thermometer stabilize for 5 min inside bath before reading it)

   B. run control wafer: Thermal Oxide (from Nancy Latta)

3. measure thickness on the Woollam again

4. calculate etch rate

   A. report in nm/min

      i) recall Woollam is in A and the etch time is 30s

      ii) get the difference from step 6 to step 8 and multiply by 2.0 to get the etch rate per min.

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