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Procedures for Qual

Detailed steps on how the quals are run

The quals are run in the following sequence of steps:

 Procedure:

Requires two test runs. One for SiO and one for SiN

1. set standard temperatures  to 60C (heat exchanger 1) and 350C (substrate 1)

2. preparing for run:

   A. run clean350 until chamber thickness is 0

   B. run recipe that is going to be used for the film to ensure the chamber is covered with the same material. for SiO run, the recipe will be SiO350-1 for 2 minutes (140 nm). for SiN, the recipe will be SiN350-1 for 2 minutes (30 nm).

   C. clean the wafer in the wbclean-1/2 with 10 min in NH4OH bath, 10 min in HCl bath, and 30 seconds in 50:1 HF bath

3. run the no film measurement on the StressTest

   A. save file as ccpqx, where ccp stands for the machine, q for qual, and x is the number of the qual wafer

   B. id = qx

   C. comment = date

4. deposit films

   A. for SiO film, use recipe SiO350-1 for 6.5 min

   B. for SiN film, use recipe SiN350-1 for 35 min

5. run the single StressTest measurement

   A. report stress in MPa

6. run the measurements on the Woollam (thickness and refractive index)

Measure:

   1. run the measurements on the Woollam (thickness and refractive index) using STS PECVD Nitride and Silicon Oxide (100 - 10,000 Ang) respectively

A. report average thickness and standard deviation in nm (Woollam is in A)

   B. report index of refraction at 633nm

2. perform HF etch on BOE 6:1 for 30s

   A. measure bath temperature (let thermometer stabilize for 5 min inside bath before reading it) in wbnonmetal

   B. run control wafer: Thermal Oxide (from Nancy Latta)

3. measure thickness on the Woollam again

4. calculate etch rate

   A. report in nm/min

      i) recall Woollam is in A and the etch time is 30s

      ii) get the difference from step 6 to step 8 and multiply by 2.0 to get the etch rate per min.

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