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SiNx Qual

Monthly qualification runs for SiNx 350-1 films.

The Control

The measurements were made with the SiN 350-1 recipe and with films of approximately 0.52um.

Stresstest

The measurements were made on the stresstest equipment, with the wafers loaded with the flat towards the user. The measurements indicate the change in stress of the wafer from before the deposition to after the deposition in MPa.

Measurement 03/15/13 04/16/13
05/25/13

Stress  86.4  75.4  81.7  

 

Etch rates

The HF etch was done in BOE 6:1 and ran for 30s. The rates are in nm/min, and the temperatures in degrees C.

Measurement 03/15/13 04/16/13 05/25/13
Etch Rate  27.16  36.14  40.4  
Bath Temp.  23C  22.5C  23C  
Thermal Oxide Rate        

 

Thickness

The measurements were made on the Woollam equipment, with the wafers loaded with the flat towards the user. The measurements indicate the average thicknesses in nm, the standard deviation, and the deposition rate in nm/min for those measurements.

Measurement 03/15/13 04/16/13 05/25/13
 Ave. Thickness  471.83  472.09  476.55  
St. Deviation  25.024  7.9783  7.9449  
Dep. Rate
13.48
 13.49
13.62

 

Index of Refraction

The measurements were made on the Woollam equipment, with the wafers loaded with the flat towards the user. The measurements indicate the index of refraction.

Measurement 03/15/13 04/16/13 05/25/13
Index of Refraction  257.26  66.780 64.066
 

 

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