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SiOx Qual

Monthly qualification runs for SiOx 350-1 films.

The Control

The measurements were made with the SiO 350-1 recipe and with films of approximately 0.52um.

Stresstest

The measurements were made on the stresstest equipment, with the wafers loaded with the flat towards the user. The measurements indicate the change in stress of the wafer from before the deposition to after the deposition in MPa.

Measurement 02/26/13 04/04/13
05/04/13
06/04/13
Stress  -211.5  -250.9  -285.4 -285.6

 

Etch rates

The HF etch was done in BOE 6:1 and ran for 30s. The rates are in nm/min, and the temperatures in degrees C.

Measurement 02/26/13 04/04/13 05/04/13 06/04/13
Etch Rate  794.18  878.13  measurement failed due to non-uniformity
413.8
Bath Temp.  23C  22.5C 22.5C
23C
Thermal Oxide Rate
       

 

Thickness

The measurements were made on the Woollam equipment, with the wafers loaded with the flat towards the user. The measurements indicate the average thicknesses in nm, the standard deviation, and the deposition rate in nm/min for those measurements.

Measurement 02/26/13 04/04/13 05/04/13 06/04/13
Ave. Thickness  477.49  485.67  486.29 507.7
St. Deviation  8.3729  7.9499  8.5997 7.2871
Dep. Rate
73.46
74.72
74.81
78.11

 

Index of Refraction

The measurements were made on the Woollam equipment, with the wafers loaded with the flat towards the user. The measurements indicate the index of refraction. The index given is the average at 633nm.

Measurement 02/26/13 04/04/13 05/04/13 06/04/13
Index of Refraction 67.652
 97.633  47.450 53.632

 

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