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SiO Qual results- HD PECVD

Qual results for SiO thin films are posted here and noted in the lab management software for the tool.

 

Thin Film Characteristics

Date
Wafer ID
Dep Rate
nm/min
Refractive
Index
Standard
Dev
%Uniformity
Stress
MPa
 Comments
16 July 2013
4 171.8 1.453 71.2 1.60 -83.91 comp  
16 July 2013 5 171.5 1.453 65.0 1.35 -96.97 comp  
16 July 2013 6 171.5 1.453 59.8 1.33 -93.96 comp  
18 July 2013
10 172.9 1.452 74.4 1.50 -98.66 comp  
18 July 2013 11 172.0 1.453 65.4 1.33 -74.89 comp  
18 July 2013 12 171.7 1.453 63.1 1.37 -78.11 comp  
11 Sept 2013
hdq4sept13
166.5 1.471
    -145.2 comp  Measured on Rudolph
11 Sept 2013
hdq5sept13 169.7
1.463
    -102.2 comp  Measured on Rudolph
11 Sept 2013
hdq6sept13
166.3
1.448
    -107.1 comp  Measured on Rudolph
30 Oct 2013
 hd-sio 10-30-13
 183.0  1.4547  -  1.9  -  After ceramic sleeve repair

 

 

Wet Etch Characteristics

Date
Wafer ID
Etch Temp
HF 50:1
nm/min
BOE 6:1
nm/min
BOE 20:1
nm/min
 12 July 2013
 1,2,3  23C  all etched
>678

>678
 
>678
 12 July 2013
 Tox1, 2, 3
  23C 93.65
 118.62  44.42
 18 July 2013  4,5,6   23C
 >1384 >1375
 >1374
 18 July 2013
 Tox4,5,6   23C  94.96  138.92 48.78
 11 Sept 2013
HDQ1, 2, 3sept13
 23C  534.8  1350.0  1316.8
 11 Sept 2013
 Tox1, 2, 3
 23C  7.0  97.0  32.2

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