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STS Deposition Recipes

This page shows some of recipe parameters and resulting deposition rates and stresses

Oxide Deposition using Low Frequency:

  • Recipe Parameters (file NPS_OX08):
    • N2O: 1400 sccm,
    • 2% SiH4:  400 sccm, 
    • Pressure: 650 mTorr,
    • Temperature: 350 C,
    • Low-Frequency Power (Forward/Reverse): 41 W / 1 W
  • Results
    • Deposition rate: ~ 340 A/min
  • Stress @ 950 nm Thickness:  ~105-140 MPa compressive

 

Nitride Deposition using dual Frequency:

  • Recipe Parameters (file std_1knit):
    • NH3: 33.5  sccm,
    • 2% SiH4:  2000 sccm, 
    • Pressure: 650 mTorr,
    • Temperature: 350 C,
    • Low-Frequency Power (Forward/Reverse): 25 W / 0 W, 2 sec.
    • High Frequency Power (Forward/ Reverse): 25 W/ 0 W, 5 sec.
  • Results
    • Deposition rate: ~ 97.5 A/min
  • Stress @ 950 nm Thickness:  ~ -199.0  MPa compressive

 

 

Oxide Deposition using Low Frequency:

  • Recipe Parameters (file std_hfox):
    • N2O: 1400 sccm,
    • 2% SiH4:  400 sccm, 
    • Pressure: 650 mTorr,
    • Temperature: 350 C,
    • High Frequency Power (Forward/Reverse): 70 W / 0 W
  • Results
    • Deposition rate: ~ 354 A/min
  • Stress @ 950 nm Thickness:  ~  
  • 12/10/12

 

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