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NEW! Recent qualification Results

Recent qual results for oxide, photoresist single crystal and poly silicon, and nitride etch rates and selectivities are given for quick reference.

Recent Process Qualifications by Date

 

Process qualifications are performed yearly after the winter shutdown, when major repairs are done or when it appears the etch process has drifted from the norm.  A description of the qual procedure can be viewed here.

Quick quals are used as a fast way to look at machine and/or recipe performance.  One wafer is placed in the same position (tray #1, slot #2) and a limited number of etch rates and selectivites are viewed.

 

Below are recent results;

 

21 March 2013- repair after major arc

 Prog #3, 2 min etch, thermal oxide

Tray
A/min
1 332A
2 324A
3 332A
4 344A
5 345A
6 338A

 

18 Jan 2013- After annual Winter shutdown.

 

Tray #
Oxide Etch Rate
(thermal)
3612 PR Etch Rate
LTO Etch Rate
Nitride Etch Rate
Single Crystal Si
Etch Rate
Ox : PR Selectivity
SiN : PR Selectivity
1 341A/min  75  354 228
  4.5 : 1
3.0 : 1
2 332
 68  344 221
   4.9 : 1
 3.3 : 1
3 338
 79  364 231
   4.3 : 1
 2.9 : 1
4 350
 73  378 242
   4.8 : 1
 3.3 : 1
5 349
 89  387 192
   3.9 : 1
 2.2 : 1
6 339
 79  344 177
   4.3 : 1
 2.2 : 1
All 342
 77  362 215
   4.4 : 1
 2.8: 1

   

 Quick check of etch rates for thermal oxide in 2012;

Date
Etch Rate for Thermal oxide
Total Etch Time
April 27
371A/min -
May 17
385A 15 min
Jun 29
290A 7 min
Jul 31
366A 2 min

 

7 Feb 2012- After annual shutdown, renovation and clean up.

 

Tray #
Oxide Etch Rate
(thermal)
3612 PR Etch Rate
LTO Etch Rate
Nitride Etch Rate
Single Crystal Si Etch Rate
Ox : PR Selectivity
SiN : PR Selectivity
1 325A/min  73  458 300
 25 4.5 : 1
4.1 : 1
2 322
 74  371 305
 31  4.4 : 1
 4.1 : 1
3 280
 78  235 40 (?)
 30  3.6 : 1
0.5 : 1 (?)
4 335
 83  213 195
 31  4.0 : 1
 2.3 : 1
5 339
 86  286 360
 33  3.9 : 1
 4.2 : 1
6 327
 78  170 271
 29  4.2 : 1
 3.5 : 1
All 321
 79  289 245
 30  4.1 : 1
3.1 : 1

 

 

6 Oct 2011 quick qual after NF3 cylinder change, Prog #1

A quick qual of prog #1  gives 352A/min single crystal Si and 249A/min PR

30 Mar 2011- quick qual of progs #3 and #4

Material
Prog 3#
Prog #4
Thermal oxide
389A/min ---
Nitride- low stress
253A/min ---
PR- 3612
--- 268A/min
Single crystal Si
30A/min 184A/min

 

8 April 2011- quick qual of prog #3 to re-check last results

A quick qual check of prog #3 gives 384A/min thermal ox and 163A/min PR.  Sel is 2.4 : 1.

30 Mar 2011- quick qual of prog #3

A quick qual check gives 385A/min thermal ox and polymer deposition rate of 25A/min.

30 Mar 2011- quick qual of prog #4

A quick qual of prog #4 for 5 mins gives 962A (192A/min) Si and 250A/min PR and 339A/min thermal oxide.

 

 

10 Feb 2011- Check of Program #4 etch rates and comparison of gas calibration factors.


CHF3 gas calibration set to 0.58.

Single crystal silicon.

 Tray
Program #4
5 mins
Etch Rate
A/min
1 1014 203
2 998 200
3 1056 211
4 1061 212
5 1146 229
6 1084 217
All 1060 212

 

CHF3 gas calibration set to 0.5.

 

Tray
Program #4
5 mins
Etch Rate
A/min
1 843 169
2 851 170
3 928 186
All 874 874

 

28 Jan 2011- After annual shutdown, clean up and vacuum repair.

 

Tray #
Oxide Etch Rate
(thermal)
3612 PR Etch Rate
Nitride Etch Rate
Ox : PR Selectivity
SiN : PR Selectivity
1 344A/min  64 234
 5.4: 1
 3.7 : 1
2 349  65 238  5.4 : 1
 3.7 : 1
3 352  72 242
 4.9 : 1
 3.4 : 1
4 355  54 244  6.6 : 1
 4.5 : 1
5 364  74 249
 4.9 : 1
 3.4 : 1
6 354  70 338
 5.0 : 1
 4.8 : 1
All 353  67 258
 5.3 : 1
 3.9 : 1

Poly silicon also tested.  Results are;

Tray #
Poly Etch Rate
Ox : Poly Selectivity

1 56
6.1 : 1
2 66
5.3 : 1
3 46
7.6 : 1
4 69
5.4 : 1
5 73
5.0 : 1
6 59
6.0 : 1
All 62
5.7: 1

 

1/13/ 2011- after major vacuum leak repaired. 

A quick qual check gives 362A/min thermal ox.

 

9 Dec 2010- after turbo and manometer replacement. 

A quick qual check of prog #3 gives 342A/min thermal ox.

 

9 Nov 2010- after gas calibration changed.

A quick qual of prog #4 for 5 mins gives 883A (177A/min) Si and 133A/min PR and Poly si 133A/min.

 

3 Nov 2010- after hex base and chamber floor cleaned.

A quick qual of prog #4 for 5 mins gives 871A (174A/min) Si and 258A/min PR.

 

 

28 Oct 2010-after hot loop repair. 

A quick qual of prog #4 for 5 mins gives 887A (177A/min) Si and 275A/min PR.

 

 

15 Jan 2010- After annual shutdown, N2 vent valve replacement and RF matching network repair.

 

Tray #
Oxide Etch Rate
(thermal)
3612 PR Etch Rate
Nitride Etch Rate
Ox : PR Selectivity
SiN : PR Selectivity
1 306A/min  77 203
 4.0 : 1
 2.6 : 1
2 310  135 206  2.3 : 1
 1.5 : 1
3 309  83 181  3.7 : 1
 2.2 : 1
4 312  106 204  2.9 : 1
 1.9 : 1
5 316  90 198  3.5 : 1
 2.2 : 1
6 308  81 201  3.8 : 1
 2.1 : 1
All 310  95 199  3.3 : 1
 2.1 : 1

Poly silicon also tested.  Results are;

Tray #
Poly Etch Rate
Ox : Poly Selectivity

1 94 3.3 : 1
2 42 7.4 : 1
3 58 5.3 : 1
4 12 26.0 : 1
5 31 10.2 : 1
6 71 4.3 : 1
All 51 6.1 : 1

 

9 Dec 2009- After turbo pump replacement.

 
Tray #
Oxide Etch Rate
(LTO)
3612 PR Etch Rate
Nitride Etch Rate
Ox : PR Selectivity
SiN : PR Selectivity
1 300 73
201
4.1: 1
1.5 : 1
2 328 85 248
3.9: 1
1.3: 1
3 367 73 220
5.0: 1
1.7: 1
4 489
89
-
5.5 : 1
-
5 124
96 -
1.3 : 1
-
6 361 85
-
4.2: 1
-
Average All
328 84
-
4.0 : 1
-

 

 Single crystal silicon also tested.  Results are;

Tray #
Single Crystal
Si Etch Rate
Ox : Si Selectivity
2 20A/min 16.4 : 1
3 19.6 18.7 : 1
4 20 24.5 : 1

8 Oct 2009- After manometer and SF6 Mass Flow Controller changed.

 

Tray #
Oxide Etch Rate
(LTO)
3612 PR Etch Rate
Nitride Etch Rate
Ox : PR Selectivity
SiN : PR Selectivity
1 348 40 221 8.7 : 1
5.5 : 1
2 335 82 276 4.1 : 1
3.4 : 1
3 326 75 228 4.3 : 1
3.0 : 1
4 351 142 234 2.5 : 1
1.6 : 1
5 343 97 218 3.5 : 1
2.2 : 1
6 341 97 203 3.5 : 1
2.1 : 1
Average All
341 89 230 3.8 : 1
2.6 : 1

 

23 Sept 2009- after CHF3 change (new vendor)

Tray #
Oxide Etch Rate
(LTO)
3612 PR Etch Rate
Nitride Etch Rate
Ox : PR Selectivity
SiN : PR Selectivity
1  311  11  244  28.3 : 1
 22.2 : 1
2  312  53  217  5.9 : 1
 4.1 : 1
3  312  87  241  3.6 : 1
 2.8 : 1
4  322  77  219  4.2 : 1
 2.8 : 1
5  410  116  221  3.5 : 1
 1.9 : 1
6  320  114  215  2.8 : 1
 1.9 : 1
Average All
 331  76  226  4.4 : 1
 3.0 : 1

 

24 June 2009- Etch rate check of LTO for all trays, position #2

Tray #
Center
Top
Bottom
Right
Left
Average
1 414 409 407 416 413 412
2 424 415 422 416 409 417
3 435 413 417 418 420 422
4 423 434 408 398 413 415
5 414 420 391 401 404 406
6 419 410 408 416 386 408

 

 

17 July 2008

Tray #
Oxide Etch Rate
(Thermal)
3612 PR Etch Rate
Nitride Etch Rate
Ox : PR Selectivity
SiN : PR Selectivity
1  342  135  -  2.5 : 1
 -
2  342  136  -  2.5 : 1
 -
3  343  137  -  2.5 : 1
 -
4  345  142  -  2.4 : 1
 -
5  347  145  -  2.4 : 1
 -
6  344  140  -  2.5 : 1
 -
Average All
 344  139  -  2.46 : 1
 -

 

 

 

 

1 July 2008

Tray #
Oxide Etch Rate
(Thermal)
3612 PR Etch Rate
Nitride Etch Rate
Ox : PR Selectivity
SiN : PR Selectivity
1  353  137  -  2.6: 1
 -
2  356 139
 -  2.6 : 1
 -
3  356  128  -  2.8 : 1
 -
4  361  141  -  2.6 : 1
 -
5  361  145  -  2.5 : 1
 -
6  356  135  -  2.6 : 1
 -
Average All
 357  138  -  2.6 : 1
 -

 

 

 

Older Date- by date

Date
Oxide Etch Rate
3612 PR Etch Rate
Ox : PR Selectivity
1/2007 350 - -
12/2006 334 212 1.6 : 1
6/2006 367 - -
10/2005 383 111 3.5 : 1

 

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