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You are here: Home / Equipment / Dry Etching / AMT 8100 Plasma Etcher, amtetcher (semi-clean) / Non-Standard and Lesser Used Recipes

Non-Standard and Lesser Used Recipes

This page contain recipes for the Amtetcher which are not used as often as the standard recipes. They may require the labmember to program the tool for their use. Additionally, these recipes have not be characterized so there will not be a list of etch rates for various materials included. Labmembers are encouraged to measure baseline etch ates for the materials to be etched.

Non-Standard and Lesser Used Recipes

Resist Descum

Resist descum is performed when there is the possibility of a very small amount of resist left on the cleared areas of the wafer pattern after development.  It should remove less than 10nm of organic polymer masking material.  The procedure may be used after using long oxide etching using CHF3, such as the standard oxide etch, Prog #3


Descum removal in general is strongly suggested prior to wet chemical etching.


The basic ranges for a typical descum recipe is given;


Gas- O2

Flow- 50-100 sccm

Pressure- 80-1000 mT

Power- 500W


Please note; this is a power controlled recipe, so no DC Bias voltage range is given.


Contact Clean-Up


Contact clean-up should be used after after contact etching, typically oxide etching using Prog #3.  This recipe will remove any damage caused by plasma etching by etching some Si.


Gas- NF3

Flow- 6 sccm

Gas- Ar

Flow- 20 sccm

Pressure- 10 mT

Power- 70 W

DC Bais- -90 V

Time- 1 min


Sputter Clean Process

The sputter clean process is a basic Ar sputter etch.  It is used to remove hard to etch materials with a compatible cleanliness level to the tool.  Examples of this type of material is boron oxide which had been formed in a BBr3 predep furnace, tylan5 at SNF or to remove oxides that may have been formed during Gasonics resist stripping.


Gas- Ar

Flow- 50 sccm

Pressure- 30 mT

Power- 1100W


Please note; this is a power controlled recipe, so no DC Bias voltage range is given.





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