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You are here: Home / Equipment / Dry Etching / AMT 8100 Plasma Etcher, amtetcher (semi-clean) / Standard Recipes and Etch Rates

Standard Recipes and Etch Rates

This table shows the etch rates for various material when using the standard recipes.

Standard Programs and Etch Rate Chart for Various Materials

Process  Si Trench Standby Std Oxide Via Etch Etch Back PR Etch Back
Process # 1 (11) 2 (12) 3 (13) 4 (14) 5 (15) 7 (17)
Step # 1 1 2 3 4 5 1 1 1 1
Cryo Pump N N - - - - N N N N
Base Press 0.8 0.8 - - - - 0.8 0.8 0.8 0.8
Warm Vent Y Y - - - - Y Y Y Y
Hold Pumpdwn N N - - - - N N N N
Hold Step - - - - - Y - - - -
Warm Step N N N N N N N N N N
Cool Step Y Y Y Y Y Y Y Y Y Y
                     
Gas 1-O2 N 50 50 50 6 N 6 30 20 40
Gas 2-CHF3 N N N N 85 N 85 50 75 60
Gas 3-SF6 N N N N N N N N N N
Gas 4-Ar N N N N N N N N N N
Gas 5-NF3 35 10 10 25 N N N N N 10
                     
Servo Press Y Y Y Y Y N Y Y Y Y
mTorr 40 55 30 50 45 55 40 40 40 40
Servo Bias Y N N N N N Y Y Y Y
DC Bias ( -V ) -350 - - - - N -530 -530 -530 -530
Max RF ( W ) 1600 1200 1400 1200 1200 0 1600 1600 1600 1600
Min Bias ( -V ) 0 -100 -100 -100 -100 0 0 0 0 0
Etch time (min) 10 1 2 2 3 1 15 10 10 10
Overetch ( % ) 0 0 0 0 0 0 0 0 0 0
Pump down - N N Y Y Y - - - -
Hold RF on - Y Y N N N - - - -
Pump (sec) - - - 30 30 30 - - - -
End of Program Y N N N N Y Y Y Y Y











Etch Rates in A/min











Si Trench   Std Oxide Via Etch Etch Back PR Etch Back
Th Ox 284




383 285 432 326
LTO Und 274




432 258 346 280
4% Und LTO 407




949 726 829 717
8% Und LTO 409




856 651 802 670
LTO Densified 289




403 329 412 282
4% Dens LTO 299




793 562 682 529
8% Dens LTO 328




686 496 612 497
Stress Nit 498




316 828 784 862
Low Stress Nit 527




210 784 610 858
Undoped Poly 519




28 232 215 231
Pos Resist 346




111 388 265 568
Si  




  240    
2% 950 PMMA  




       
Polymer                    

9/2005 Jin Park







List of Changes










Date Initial Changes

10/1/2004
08/13/2008
EE
NL
- Reduced Base Press value from 0.8 to 0.5 mTorr
- Changed base pressure back to 0.8 mT to decrease pumpdown time.  Lower base not needed because Cl not used in etcher.  Moisture not that much of an issue.

10/1/2004 EE - Reduced Servo Press value from 50 mTorr to 40 mTorr

10/1/2004 EE - Eliminated the Clean Recipe (recipe #1)

10/1/2004 EE - Moved the Si Trench recipe to Recipe #1 slot

10/1/2004 EE - Modified the Standby recipe to include a clean and a recondition steps

 

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