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Etch Rates and Selectivities

Etch rates for different recipes
  • CHF3/O2 PECVD SiO2 etching
    • CHF3: 100 sccm , O2: 15 sccm (75%), pressure: 100 mTorr, power: 150 W
        • etch rate: 37 - 40 nm/min in the center, slightly higher at the edges of the wafer
        • selectivity: (0.63 : 1) - (0.69 : 1) (etches resist faster then oxide!)
    • CHF3: 100 sccm , O2: 4 sccm (20%), pressure: 100 mTorr, power: 150 W
        • etch rate: 44 nm/min (to 29.9 when most area covered by resist) in the center, 47 nm/min (to 31) at the edges of the wafer
        • selectivity: 2.2 : 1 in the center, 1.7 : 1 at the edges of the wafer
    • CHF3: 100 sccm , O2: 4 sccm (20%), pressure: 80 mTorr, power: 150 W
        • etch rate: 39.5 nm/min
        • selectivity: 0.9 : 1
    • CHF3: 50 sccm, O2 : 15 sccm (75%), pressure: 100 mTorr, power: 100 W
        • etch rate: ~ 30 nm/min
  • CHF3/O2 PECVD Nitride etching
    • CHF3: 50 sccm, O2: 2 sccm (10%), pressure: 100 mTorr, power: 150 W
        • etch rate 66 nm/min in the center, 34 nm/min at the edges of the wafer
    • CHF3: 50 sccm, O2: 2 sccm (10%), pressure: 100 mTorr, power: 100 W
        • etch rate 47 nm/min in the center, 30 nm/min at the edges of the wafer
  • SF6/F116 PECVD SiO2 etching
    • SF6: 50 sccm, F116: 33 sccm, pressure 200 mTorr, power: 90 W
        • etch rate: 13.7 nm/min in the center, 15 nm/min average
        • selectivity: 1 : 1 in the center, 1.5 : 1 average
  • SF6/F116 PECVD Nitride etching
    • SF6: 50 sccm, F116: 33 sccm, pressure 200 mTorr, power: 90 W
        • etch rate: 64 nm/min in the center, 71 nm/min average
        • selectivity: 4.6 : 1 in the center, 6.9 : 1 average

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