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Ar Sputter Etch Qual Results

Standard Ar recipe used for 10 minutes on thermal oxide wafers; Ar 15sccm, 12.5mT, 100W, 600-700pV; quartz insulator plate not used, quartz corral ring used to keep wafers centered. This recipe is a quick check that gives us a good idea of machine functionality.

 

 

 

 Date Power
Vpeak
Etch Rate
Comments
13 Oct 2011
100 600 14.3 Etch rate established during tests concerning burning resist (Unity Semiconductor Study)
8 Nov 2011
100 600 14.0  
6 Feb 2012
100 600 23.5 After annual lab shutdown and renovation.  Tool was turned off for extended period.
3 April 2012
100 600 13.7 Check after increased etch rate of O2 recipe.
17 May 2012
100 610 21.4  
17 May 2012
105-107 660 23.3  
30 May 2012
100 650 16.7 Used quartz plate
31 May 2012
100
660 22.0  
8 Jul 2012
100 620-660 25.0  
11 Jul
105 660 20.8  
19 Jul 2012
103 660 23.2  
23 Jul 2012
105 690 19.0  
23 Jul 2012
115 700 21.0  
 27 Jul 2012
 100  690-700  16.9  New solid state(!) RF generator installed.
 8 Jan 2013
 100  660  17.0  Qual after annual winter shutdown.

 

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