Selected Recipes

The following is a list of recipes used in the etcher by various labmembers. They are offered as a starting point for interested users. Users of the MRC are cautioned to establish etch rates for their specific samples, materials and patterns.

A Sampling of MRC Recipes

These recipes were obtained by asking MRC users for their commonly used recipes. They can often be good starting points for Labmembers who want to optimize or characterize etch recipes. Users are encouraged to add their recipes to this library via the Labmember’s Wiki.

Material Etched	Gas 1 Sccm	Gas 2 Sccm	Chamber Pressure mT	RF Forward Power W	Peak Voltage (Vpeak) V	Etch Rate A/min
PECVD SiO2	O2 15	CHF3 5	35	80	500	~180
PECVD SiO2	O2 2	CHF3 15	50	100	500	~658
PECVD SiO2	O2 2	CHF3 15	50	80	-	~548
PECVD SiO2	O2 2	CHF3 15	50	50	-	~228
PECVD SiO2	O2 15	CHF3 5	37	80	500	~137
PECVD SiO2	O2 30	CHF3 10	37.5	80	500	~164
Si	O2 50	-	100	200	700	~400
SOG	SF6 10	-	15	50	160	~1100
Si Carbide	O2 10	-	24	200	880	-
Nitride	O2 15	CHF3 15	25	50	340	~305
PECVD Nitride	O2 15	CHF3 15	25	50	350	~305
Nitride	O2 3	CHF3 15	50	50	-	~600
LS Nitride on Glass	O2 3	CHF3 15	50	60	330/400	<1000
PECVD Nitride	O2 2	SF6 34.6	53	50	600	~130
Nitride	O2 2	SF6 18	53	50	600	~130
Resist	O2 20	-	100	50	230	-

Material Etched	Gas1 Sccm	Gas2 Sccm	Chamber Pressure mT	RF Power Forward W	Peak Voltage (Vpeak) V	Etch Rate A/min
Resist	O2 20	-	25	55	340	~400
Resist	O2 15	-	3	150	750	~1300
Resist on GaAs	O2 20	-	150	60	-	-
Resist on Glass	O2 25	-	100	40	-	-
Polyimide on Si	O2 20	-	100	50	230	-
Polyimide	O2 15	-	5	150	1000	~1000
Polyimide	O2 20	-	25	55	340	~400
Polyimide/ PMGI	O2 15	-	3	150	750	~1300
PMGI	O2 20	-	150	60	-	-
O2 Clean	O2 20	-	12.5	100	660	Chamber Clean
Oxide/ Polymer	Ar 15	-	5	150	750	-
Al on Si	Ar 15	-	4	150	300	~25
Ta	O2 2	CHF3 15	12.5	100	660	~83
Ti	Ar 5	SF6 10	7	150	850	~455
TiW	Ar 15	-	10	70	450	~1100
TiN	Ar 30	SF6 30	10	100	600	~408
TiO2	O2 2	CHF3 15	12.5	100	660	~143
Sputter Etch	Ar 10	-	10	100	600	-

Sputter Etch of Various Materials

Below is a list of materials etched using the following process;

Gas = Ar 15sccm
Chamber Pressure = 12.5mT
RF Power = 100W
Peak Voltage = 660V

Material	Etch Rate A/min
Al	12
Ag	200
Au	90
Cu	113
Hf	10
Ir	63
Mo	40
Ni	20
Pd	56
Pt	91
SiO2 (PECVD)	13

Document Actions

Sections

Personal tools

Selected Recipes

A Sampling of MRC Recipes

Sputter Etch of Various Materials