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Selected Recipes

The following is a list of recipes used in the etcher by various labmembers. They are offered as a starting point for interested users. Users of the MRC are cautioned to establish etch rates for their specific samples, materials and patterns.

A Sampling of MRC Recipes

 

These recipes were obtained by asking MRC users for their commonly used recipes.  They can often be good starting points for Labmembers who want to optimize or characterize etch recipes.  Users are encouraged to add their recipes to this library via the Labmember’s Wiki.

 

 

Material Etched

Gas 1

Sccm

Gas 2

Sccm

Chamber Pressure

mT

RF Forward Power

W

Peak Voltage (Vpeak)

V

Etch Rate

A/min

PECVD SiO2

O2

15

CHF3

5

35

80

500

~180

PECVD SiO2

O2

2

CHF3

15

50

100

500

~658

PECVD SiO2

O2

2

CHF3

15

50

80

-

~548

PECVD SiO2

O2

2

CHF3

15

50

50

-

~228

PECVD SiO2

O2

15

CHF3

5

37

80

500

~137

PECVD SiO2

O2

30

CHF3

10

37.5

80

500

~164

Si

O2

50

-

100

200

700

~400

SOG

SF6

10

-

15

50

160

~1100

Si Carbide

O2

10

-

24

200

880

-

Nitride

O2

15

CHF3

15

25

50

340

~305

PECVD Nitride

O2

15

CHF3

15

25

50

350

~305

Nitride

O2

3

CHF3

15

50

50

-

~600

LS Nitride on Glass

O2

3

CHF3

15

50

60

330/400

<1000

PECVD

Nitride

O2

2

SF6

34.6

53

50

600

~130

Nitride

O2

2

SF6

18

53

50

600

~130

Resist

O2

20

-

100

50

230

-

 

Material Etched

Gas1

Sccm

Gas2

Sccm

Chamber

Pressure

mT

RF

Power

Forward

W

Peak

Voltage

(Vpeak)

V

 

Etch Rate

A/min

Resist

O2

20

-

25

55

340

~400

Resist

O2

15

-

3

150

750

~1300

Resist on GaAs

O2

20

-

150

60

-

-

Resist on Glass

O2

25

-

100

40

-

-

Polyimide on Si

O2

20

-

100

50

230

-

Polyimide

O2

15

-

5

150

1000

~1000

Polyimide

O2

20

-

25

55

340

~400

Polyimide/

PMGI

O2

15

-

3

150

750

~1300

PMGI

O2

20

-

150

60

-

-

O2 Clean

O2

20

-

12.5

100

660

Chamber Clean

Oxide/

Polymer

Ar

15

-

5

150

750

-

Al on Si

Ar

15

-

4

150

300

~25

Ta

O2

2

CHF3

15

12.5

100

660

~83

Ti

Ar

5

SF6

10

7

150

850

~455

TiW

Ar

15

-

10

70

450

~1100

TiN

Ar

30

SF6

30

10

100

600

~408

TiO2

O2

2

CHF3

15

12.5

100

660

~143

Sputter Etch

Ar

10

-

10

100

600

-

 

 

 

 

Sputter Etch of Various Materials

 

Below is a list of materials etched using the following process;

  • Gas = Ar 15sccm
  • Chamber Pressure = 12.5mT
  • RF Power = 100W
  • Peak Voltage = 660V

 

Material

Etch Rate A/min

Al

12

Ag

200

Au

90

Cu

113

Hf

10

Ir

63

Mo

40

Ni

20

Pd

56

Pt

91

SiO2 (PECVD)

13

 

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