Selected Recipes
A Sampling of MRC Recipes
These recipes were obtained by asking MRC users for their commonly used recipes. They can often be good starting points for Labmembers who want to optimize or characterize etch recipes. Users are encouraged to add their recipes to this library via the Labmember’s Wiki.
Material Etched |
Gas 1 Sccm |
Gas 2 Sccm |
Chamber Pressure mT |
RF Forward Power W |
Peak Voltage (Vpeak) V |
Etch Rate A/min |
PECVD SiO2 |
O2 15 |
CHF3 5 |
35 |
80 |
500 |
~180 |
PECVD SiO2 |
O2 2 |
CHF3 15 |
50 |
100 |
500 |
~658 |
PECVD SiO2 |
O2 2 |
CHF3 15 |
50 |
80 |
- |
~548 |
PECVD SiO2 |
O2 2 |
CHF3 15 |
50 |
50 |
- |
~228 |
PECVD SiO2 |
O2 15 |
CHF3 5 |
37 |
80 |
500 |
~137 |
PECVD SiO2 |
O2 30 |
CHF3 10 |
37.5 |
80 |
500 |
~164 |
Si |
O2 50 |
- |
100 |
200 |
700 |
~400 |
SOG |
SF6 10 |
- |
15 |
50 |
160 |
~1100 |
Si Carbide |
O2 10 |
- |
24 |
200 |
880 |
- |
Nitride |
O2 15 |
CHF3 15 |
25 |
50 |
340 |
~305 |
PECVD Nitride |
O2 15 |
CHF3 15 |
25 |
50 |
350 |
~305 |
Nitride |
O2 3 |
CHF3 15 |
50 |
50 |
- |
~600 |
LS Nitride on Glass |
O2 3 |
CHF3 15 |
50 |
60 |
330/400 |
<1000 |
PECVD Nitride |
O2 2 |
SF6 34.6 |
53 |
50 |
600 |
~130 |
Nitride |
O2 2 |
SF6 18 |
53 |
50 |
600 |
~130 |
Resist |
O2 20 |
- |
100 |
50 |
230 |
- |
Material Etched |
Gas1 Sccm |
Gas2 Sccm |
Chamber Pressure mT |
RF Power Forward W |
Peak Voltage (Vpeak) V
|
Etch Rate A/min |
Resist |
O2 20 |
- |
25 |
55 |
340 |
~400 |
Resist |
O2 15 |
- |
3 |
150 |
750 |
~1300 |
Resist on GaAs |
O2 20 |
- |
150 |
60 |
- |
- |
Resist on Glass |
O2 25 |
- |
100 |
40 |
- |
- |
Polyimide on Si |
O2 20 |
- |
100 |
50 |
230 |
- |
Polyimide |
O2 15 |
- |
5 |
150 |
1000 |
~1000 |
Polyimide |
O2 20 |
- |
25 |
55 |
340 |
~400 |
Polyimide/ PMGI |
O2 15 |
- |
3 |
150 |
750 |
~1300 |
PMGI |
O2 20 |
- |
150 |
60 |
- |
- |
O2 Clean |
O2 20 |
- |
12.5 |
100 |
660 |
Chamber Clean |
Oxide/ Polymer |
Ar 15 |
- |
5 |
150 |
750 |
- |
Al on Si |
Ar 15 |
- |
4 |
150 |
300 |
~25 |
Ta |
O2 2 |
CHF3 15 |
12.5 |
100 |
660 |
~83 |
Ti |
Ar 5 |
SF6 10 |
7 |
150 |
850 |
~455 |
TiW |
Ar 15 |
- |
10 |
70 |
450 |
~1100 |
TiN |
Ar 30 |
SF6 30 |
10 |
100 |
600 |
~408 |
TiO2 |
O2 2 |
CHF3 15 |
12.5 |
100 |
660 |
~143 |
Sputter Etch |
Ar 10 |
- |
10 |
100 |
600 |
- |
Sputter Etch of Various Materials
Below is a list of materials etched using the following process;
- Gas = Ar 15sccm
- Chamber Pressure = 12.5mT
- RF Power = 100W
- Peak Voltage = 660V
Material |
Etch Rate A/min |
Al |
12 |
Ag |
200 |
Au |
90 |
Cu |
113 |
Hf |
10 |
Ir |
63 |
Mo |
40 |
Ni |
20 |
Pd |
56 |
Pt |
91 |
SiO2 (PECVD) |
13 |
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