Skip to content. | Skip to navigation

Sections
Personal tools
Navigation
 

STS Simulated Recipe Test Run

This process is based on a 2 step STS process (2 sec dep, 3 sec etch) The STS process also used a 45W Bias during deposition and no Ar The customer required no specifications to meet for this process
Dep  Etch A  Etch B 
Time (s)  2 1.5 3
Pressure (mTorr)  12 45 50
C4F8 (sccm)  100 (150) (150)
SF6 (sccm)  (150) 400 400
Ar (sccm)  30 30 30
ICP (W)  1000 2500 2500
Bias (V)  10 350 10
Electrode Temp (°C)  0 0 0
Lid Temp (°C)  150 150 150
Liner Temp (°C)  70 70 70
Spool Temp (°C)  180 180 180
He pressure (Torr)  4 4 4

 

(  ) indicates gas flow, but is dumped to exhaust bypass.  
This keeps the flow rate more stable during switching than turning on/off the MFC.

Document Actions