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Recent Qual Results

This page contains the results from recent quals. Quals are run periodically, when a puzzling problem is reported or when major repairs have been performed on the tool.

Recent Qual Results

 

Etch Conditions: 1000W ICP/ 150W BP/ 70 Cl2/ 20 BCl3/ 10N2/ 7mT/4T BSHe/ Electrode 20C/Lid 90C/Liner 70C/ Spool 90 C/ 30 sec 


3/9/2013

Please note: Etch rate and selectivity data is based on etching six inch wafers.  Four inch results may be slightly different.

·         Al Etch Rate = 6208A/min; Uniformity = 10.7%

·         (based on 9 pt Rs measurements; 10mm edge excl; Al  Resistivity = 2.86E-02 ohm-cm)

·         Oxide ER = 964A/min; Uniformity = 6.85% (NanoSpec; Thermal oxide; 9 pt)

·         Photo resist ER = 4727A/min; Unif = 11.9% (SPR3612; 9 pt; NanoSpec)

·         Al:PR Selectivity = 1.31

·         Al: Oxide Selectivity = 6.44

 

7/30/2014

Etch rate and selectivity data on 4" wafers

·         Al Etch Rate = 8903A/min; Uniformity = 8.7%

·         (based on 9 pt Rs measurements; 10mm edge excl; Al  Resistivity = 2.86E-02 ohm-cm)

·         Oxide ER = 1805A/min; Uniformity = 1.9% (NanoSpec; 5 points; Thermal oxide - Patterned wafer)

·         Si ER = 5326A/min; Uniformity = 1.24% (Step height; AlphaStep; 5 points; Patterned wafer)

·         Photo resist ER = 7233A/min; Unif = 5.3% (NanoSpec; 5 points; SPR3612; Si wafers pattered with 3612 resist)

·         Al:PR Selectivity = 1.23

·         Al: Oxide Selectivity = 4.93

·         Al: Si Selectivity = 1.67

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